DAC025N120Z1

DAC025N120Z1 DACO | Alldatasheet

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Features

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Applications

ವ6ZLWFKLQJ0RGH3RZHU6XSSO\\ ವ'&'&&RQYHUWHUV836DQG3)& ವ(9&KDUJLQJ6WDWLRQ ವ+LJKHU6\\VWHP(IILFLHQF\\ ವ(DVHRI3DUDOOHOLQJ ವ&DSDEOHRIr&+LJK7 -$SSOLFDWLRQ ವ&DSDEOHRI+LJK6ZLWFKLQJ)UHTXHQF\\2SHUDWLQJ ವ0LQLDWXUL]HDQG/LJKW:HLJKW6\\VWHP ವ0RWRU'ULYHV ವ3RZHU,QYHUWHUV ವ6RODU:LQG5HQHZDEOH(QHUJ\\ Package Dimensions TO-247-.4L Package 6HSW VDSS 1200V RDS(ON) 25mΩ I D(@25ഒ) 86A Parameter Symbol Ratings Unit Drain-Source Voltage VDS 1 2 0 0V Gate-Source Voltage VGS -5/+20 V Drain Current-Continuous C I C ° 5 2 = D 58 A Pulse Drain Current ID,pulse 3 27 A Power Dissipation PD 3 7 5 W Storage Temperature Range TSTG - 5 5 t o + 1 7 5 ° C T e g n a R e r u t a r e p m e T n o i t c n u J g n i t a r e p OJ - 5 5 t o + 1 7 5 ° C R JC 0 . 4 ° C / W θThermal Resistance, Junction-to-Case MMounting Torque (M3 or 6-32 screw) d 1.0 Nm @ T C C ° 110 = @ T 7F ഒXQOHVVRWKHUZLVHVSHFLILHG Avalanche Energy, Single Pulse EAS 3000 m J A E POLISH Exposed Cu 3x b3 4x b C D e L2L1 L 2xE2(8.38) (12.7) (6.35) ( 3) Q HH Symbol mm Min. Typ. Max. A 4.83 5.02 5.21 A1 2.29 2.41 2.54 A2 1.91 2.00 2.16 b’ 1.07 1.20 1.28 b 1.07 1.20 1.33 b1 2.39 2.67 2.94 b2 2.39 2.67 2.84 b3 1.07 1.30 1.60 b4 1.07 1.30 1.50 b5 2.39 2.53 2.69 b6 2.39 2.53 2.64 c 0.55 0.60 0.68 c1 0.55 0.60 0.65 D 23.30 23.45 23.60 D1 16.25 16.55 17.65 D2 0.95 1.19 1.25 E 15.75 15.94 16.13 E1 13.10 14.02 14.15 E2 3.68 4.40 5.10 E3 1.00 1.45 1.90 E4 12.38 13.26 13.43 e 2.54 BSC e1 5.08 BSC L 17.31 17.57 17.82 L1 3.97 4.19 4.37 L2 2.35 2.50 2.65 P 3.51 3.61 3.65 P1 7.19 REF. Q 5.49 5.79 6.00 S 6.04 6.17 6.30 b’,b2,b4,b6 (c) (b,b1,b3,b5) SecƟon F-F, G-G D2 E4 P1S P GG FF VDD=100V ID=14A www.dacosemi.com.tw - 1 - Gate (Pin4) Drain (Pin1, TAB) Power Source (Pin2) Driver Source (Pin3)

DACO SEMICONDUCTOR CO., LTD. DAC025N120Z1 Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS =0V，， ，，IDS =0.1mA 1200 V Zero Gate Voltage Drain Current IDSS VGS =0V，， ，，VDS =1200V 50 μA IGate-Source Leakage Current GSS VGS =20V ，， ，，VDS =0V 250 nA ON Characteristics Gate Threshold Voltage VDS =10V，， ，，IDS =50mA - 2.35 V Drain-Source On-State Resistance R DS(on) VGS =20V，， ，，IDS =40A 33 mΩ Dynamic Characteristics C e c n a t i c a p a C t u p n Iiss 4656 C e c n a t i c a p a C t u p t u Ooss 188 Reverse Transfer Capacitance Crss VDS =800V VGS =0V Freq.=1MHz 36 pF Switching Characteristics t e m i T y a l e D n O - n r u Td(on) - Rise Time tr 55 t e m i T y a l e D f f O - n r u Td(off) Fall Time tf VDS =800V VGS =-4/+20V ID =40A，R =20Ω ns Total Gate Charge Qg Gate to Source Charge Qgs G a t e t o D r a i n C h a r g e Q gd VDS =800V VGS =-5/+20V ID =40A nC Reverse Diode Characteristics Diode Forward Voltage VSD VGS=0V，ISD=12A - %DVHGRQWKHUHVXOWVRIFDOFXODWLRQQRWHWKDWWKHHQHUJ\\ORVVFDXVHGE\\WKHUHYHUVHUHFRYHU\\RIIUHHZKHHOLQJGLRGHLVQRWLQFOXGHGLQ(RQ Electrical Characteristics @ TC =25°C (unless otherwise specified) Continuous Diode Forward Current Reverse Recovery Time Trr I S - VGS=0V ISD=40A，VDS=400V, di/dt=300A/μs A ns Internal Gate Resistance G(int.) Ω-1 . 2 9 - RG(ext) =2.7Ω - - - <1 - - - 25 31 - 2.65 305 μJTurn-On Switching Energy Turn-Off Switching Energy Eon Eoff VDD=800V， =0V/+20V ID =20A，L=350nH RG(ext) =2.2Ω 364* - 208* - - VGS(th) R f=1MHz，V =25mVAC C Stored Energy Eoss 78 - - V =25mVAC L VGS=0V，TC=25°C VGS =0V，V DS =800V Freq.=1MHz， V =25mVAC -2 5 5 - n C -1 0 . 3 - A Q rr Irrm Reverse Recovery Charge Peak Reverse Recovery Current 6HSW www.dacosemi.com.tw - 2 - FWD=Body Diode of MOSFET VGS oss

DACO SEMICONDUCTOR CO., LTD. DAC025N120Z1 6HSW www.dacosemi.com.tw - 3 - Typical Device Performance Fig.1 Forward Output CharacterisƟcs at TJ =25˚C Fig.2 Forward Output CharacterisƟcs at TJ =175˚C Fig.3 On-Resistance vs. Drain Current for Various TJ Fig.4 Transfer CharacterisƟcs for Various TJ Fig.5 On-Resistance vs. Gate Voltage for Various TJ Fig.6 On-Resistance vs. Temperature for Various Gate Voltage 100 120 140 02468 1 0 I , t n e r r u C n i a r DD (A) Drain-Source Voltage, VDS (V) VGS＝0V VGS＝10V VGS＝12V VGS＝14V VGS＝16V VGS＝18V VGS＝20V 100 120 140 02468 1 0 Drain Current, ID (A) Drain-Source Voltage, VDS (V) VGS＝0V VGS＝10V VGS＝12V VGS＝14V VGS＝16V VGS＝18V VGS＝20V 100 150 200 02468 1 0 1 2 Drain Current, ID (A) Gate-Source Voltage, VGS (V) JT＝25˚C ＝175˚C CondiƟons: VDS=10V 100 200 300 400 500 0 5 10 15 20 ( ) n o (SD R ,ec n a t s i s e R nOm Ω) Gate-Source Voltage (V) CondiƟons: ID=40A TJ＝175˚C TJ＝25˚C 100 0 50 100 150 200 On Resistance, RDS(on) (mΩ) Junction Temperature, TJ (˚˚˚C) CondiƟons: ID=40A VG=12V VG=14V VG=16VVG=18VVG=20V VG=10V 100 0 30 60 90 120 150 180 R , ec n a t sis e R n ODS(on) (mΩ) Drain Current (A) CondiƟons: VGS=20V TJ＝175˚C TJ＝25˚C CondiƟons: TJ =25˚C CondiƟons: TJ =175˚C JT

DACO SEMICONDUCTOR CO., LTD. DAC025N120Z1 6HSW www.dacosemi.com.tw - 4 - Typical Device Performance Fig.7 Normalized On-Resistance vs. Temperature Fig.8 Reverse Output CharacterisƟcs at TJ = 25˚C Fig.9 Reverse Output CharacterisƟcs at T 175 ˚C Fig.10 Capacitances vs. Drain to Source Voltage Fig.11 Threshold Voltage vs. Temperature Fig.12 Output Capacitor Stored Energy J = 0.5 1.5 2.5 0 50 100 150 200 R ,ecnatsiseR nO dezilamroN DS(on) (P.U.) Junction Temperature, Tj (˚˚˚C) CondiƟons: VGS=20V ID=40A -70 -60 -50 -40 -30 -20 -10 -10 -8 -6 -4 -2 0 Drain Current, ID (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ =25 ˚C VGS＝5V VGS＝0V VGS＝-5V VGS＝20V VGS＝15V VGS＝10V -70 -60 -50 -40 -30 -20 -10 -10 -8 -6 -4 -2 0 I ,tnerruC niarD D (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ =175˚C VGS＝5V VGS＝0V VGS＝-5V VGS＝20V VGS＝15V VGS＝10V 1.E-11 1.E-10 1.E-09 1.E-08 0.1 1 10 100 1000 Capacitance, C (F) Drain-Source Voltage, VDS (V) Ciss CondiƟons: Tc=25˚C VAC=25mV f: 1MHz Coss Crss 0 50 100 150 200 V ,egatloV dlohserhT etaG th (V) Junction Temperature, TJ (˚˚˚C) CondiƟons: VDS=10V ID=50mA 0.0E+00 2.0E-05 4.0E-05 6.0E-05 8.0E-05 1.0E-04 1.2E-04 0 200 400 600 800 1000 Coss Stored Energy, Eoss (J) Drain-Source Voltage, VDS (V) CondiƟons: Tc=25˚C VAC=25mV f: 1MHz

DACO SEMICONDUCTOR CO., LTD. DAC025N120Z1 6HSW www.dacosemi.com.tw - 5 - Typical Device Performance Fig.13 Maximum Power DissipaƟon DeraƟng vs. Case Temperature Fig.14 Drain Current DeraƟng vs. Case Temperature Fig.15 Safe OperaƟng Area Fig.16 Gate Charge CharacterisƟcs Fig.17 Clamped InducƟve Switching Energy vs. Drain Current Fig.18 Clamped InducƟve Switching Energy vs. External Gate Resistor (RG(ext.)) Gate-Source Voltage, VGS (V) Gate Charge, QG (C) CondiƟons: ID=40A VDS=800V TJ =25˚C 100 200 300 400 500 0 25 50 75 100 125 150 175 P ,noitapissiD rewoP xaM D (W) Case Temperature, Tc (˚˚˚C) CondiƟons: VGS=20V 100 120 0 25 50 75 100 125 150 175 Peak Forward Current (A) Case Temperature, Tc (˚˚˚C) CondiƟons: VGS=20V 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 10000 I ,tnerruC niarD D (A) Drain-Source Voltage, VDS (V) CondiƟons: Tc=25˚C Single Pulse Parameter: tPW 0.0E+00 5.0E-04 1.0E-03 1.5E-03 2.0E-03 2.5E-03 02 0 4 0 6 0 8 0 E ,ygrenE gnihctiwS SW (J) Drain-Source Current, ID (A) Etot Eoff Eon CondiƟons: Tc=25˚C VDS=800V RG(ext.)=2.2Ω VGS=0/20V L=350nH 0.0E+00 1.5E-03 3.0E-03 4.5E-03 6.0E-03 7.5E-03 9.0E-03 0 5 10 15 20 25 Switching Energy, ESW (J) External Gate Resistance, RG(ext.) (Ω) CondiƟons: Tc=25˚C VDS=800V ID=20A VGS=0/20V L=350nH Etot Eoff Eon

DACO SEMICONDUCTOR CO., LTD. DAC025N120Z1 6HSW www.dacosemi.com.tw - 6 - Typical Device Performance Fig.19 SchemaƟc of ResisƟve Switching Fig.20 Switching Times Defini Ɵon Fig.21 Transient JuncƟon to Case Thermal Impedance td(on) td(off)tr tf VDS VGS 90% 10% R D.U.T. VDC 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 ,ecnadepmI lamrehTZ th(j-c) (K/W) Pulse time, tPW (sec) D=0.8 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pusle

DACO SEMICONDUCTOR CO.,LTD. DAC025N120Z1 Sept 2023 www.dacosemi.com.tw - 7 - DACO Semiconductor reserves the right to make modifications, enhancements, improvements, corrections, or other changes to this document and any product described herein without prior notice. DACO Semiconductor makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. Purchasers are responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations, and safety requirements or standards, regardless of any support or application information provided by DACO Semiconductor. “Typical” parameters that may be provided in DACO Semiconductor datasheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by the customer’s technical experts. DACO Semiconductor products are not designed, authorized, or warranted to be suitable for use in life support, life-critical or safety-critical systems, or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accepts no liability for the inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Purchasers who buy or use DACO Semiconductor products for any unintended or unauthorized applications are required to indemnify and absolve DACO Semiconductor, its suppliers, and distributors from any claims, costs, damages, expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or by any information storage and retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd.