DAC020N065Z1

DAC020N065Z1 DACO | Alldatasheet

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Technical content

Features

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Applications

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DACO SEMICONDUCTOR CO., LTD. DAC020N065Z1 Parameter Symbol Conditi ons Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BV DSS VGS =0V，，，，IDS =0.1mA 650 V Zero Gate Voltage Drain Current I DSS VGS =0V，，，，VDS =650V 100 μA IGate-Source Leakage Current GSS VGS =20V ，，，，VDS =0V 250 nA ON Characteristics Gate Threshold Voltage VDS =10V，，，，IDS =50mA - 2.6 V Drain-Source On-State Resistance R DS(on) VGS =20V，，，，IDS =50A 26 mΩ Dynamic Characteristics C ecnaticapaC tupnI iss 4838 C ecnaticapaC tuptuO oss 359 Reverse Transfer Capacitance C rss VDS =400V VGS =0V Freq.=1MHz 47 pF Switching Characteristics t emiT yaleD nO-nruT d(on) - Rise Time t r 51 t emiT yaleD ffO-nruT d(off) Fall Time t f VDD=400V VGS =-4/+20V ID =35A，R =11.4Ω ns Total Gate Charge Q g Gate to Source Charge Q gs G a t e t o D r a i n C h a r g e Q gd VDS =400V VGS =-5/+20V ID =50A nC Reverse Diode Characteristics Diode Forward Voltage V SD VGS=0V，ISD=10A - %DVHGRQWKHUHVXOWVRIFDOFXODWLRQQRWHWKDWWKHHQHUJ\\ORVV FDXVHGE\\WKHUHYHUVHUHFRYHU\\RIIUHHZKHHOLQJGLRGHLVQRWL QFOXGHGLQ(RQ Electrical Characteristics @ TC =25°C (unless otherwise specified) Continuous Diode Forward Current Reverse Recovery Time T rr I S - 61.5 VGS=0V ISD=30A，VDS=400V, di/dt=300A/μs A ns Internal Gate Resistance G(int.) Ω-0 . 6 - RG(ext) =2.7Ω - - - <1 - - - 20 29 - 2.9 287 μJTurn-On Switching Energy Turn-Off Switching Energy Eon Eoff VDD=400V VGS =0V/+20V， ID =50A RG(ext) =2.7Ω 61.7* - 101* - - VGS(th) R f=1MHz，V =25mVAC C Stored Energy Eoss 34 - - V =25mVAC L VGS=0V，TC=25°C VGS =0V，V DS =400V Freq.=1MHz， V =25mVAC -3 0 1 - n C -6 . 9 - A Q rr Irrm Reverse Recovery Charge Peak Reverse Recovery Current 6HSW www.dacosemi.com.tw - 2 - oss

DACO SEMICONDUCTOR CO., LTD. DAC020N065Z1 6HSW www.dacosemi.com.tw - 3 - Typical Device Performance Fig.1 Forward Output CharacterisƟcs at TJ =25˚C Fig.2 Forward Output CharacterisƟcs at TJ =175˚C 120 160 02468 1 0 Drain Current, ID (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ =175˚C VGS＝0V VGS＝10V VGS＝12V VGS＝14V VGS＝16V VGS＝18V VGS＝20V 120 160 02468 1 0 I ,tnerruC niarD D (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ=25˚C VGS＝0V VGS＝10V VGS＝12V VGS＝14V VGS＝16V VGS＝18V VGS＝20V Fig.3 On-Resistance vs. Drain Current for Various TJ Fig.4 Transfer CharacterisƟcs for Various TJ 0 40 80 120 160 R ,ecnatsiseR nO DS(on) )Ωm( Drain Current (A) CondiƟons: VGS=20V TJ＝175˚C TJ＝25˚C 0 3 6 9 12 15 Drain Current, ID (A) Gate-Source Voltage, VGS (V) CondiƟons: VDS=20V TJ＝25˚C TJ＝175˚C Fig.5 On-Resistance vs. Gate Voltage for Various TJ Fig.6 On-Resistance vs. Temperature for Various Gate Voltage 120 150 0 5 10 15 20 R ,ecnatsiseR nO DS(on) )Ωm( Gate-Source Voltage (V) CondiƟons: ID=50A TJ＝175˚C TJ＝25˚C 0 50 100 150 200 On Resistance, RDS(on) (mΩ) Junction Temperature, TJ (˚˚˚C) CondiƟons: ID=50A VGS=12V VGS=14V VGS=16V VGS=18V VGS=20V

DACO SEMICONDUCTOR CO., LTD. DAC020N065Z1 6HSW www.dacosemi.com.tw - 4 - Typical Device Performance Fig.7 Normalized On-Resistance vs. Temperature Fig.8 Reverse Output CharacterisƟcs at TJ = 25˚C Fig.9 Reverse Output CharacterisƟcs at T 175 ˚C Fig.10 Capacitances vs. Drain to Source Voltage Fig.11 Threshold Voltage vs. Temperature Fig.12 Output Capacitor Stored Energy J = 0.5 1.5 0 50 100 150 200 R ,ecnatsiseR nO dezilamroN DS(on) (P.U.) Junction Temperature, TJ (˚˚˚C) CondiƟons: VGS=20V ID=50A -50 -40 -30 -20 -10 - 1 0 - 8- 6- 4- 2 0 Drain Current, ID (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ =25 ˚C VGS＝5V VGS＝0V VGS＝-5V VGS＝20V VGS＝15V VGS＝10V -50 -40 -30 -20 -10 - 1 0 - 8- 6- 4- 2 0 I ,tnerruC niarD D (A) Drain-Source Voltage, VDS (V) CondiƟons: TJ =175˚C VGS＝5V VGS＝0V VGS＝-5V VGS＝20V VGS＝15V VGS＝10V 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 0.1 1 10 100 1000 Capacitance, C (F) Drain-Source Voltage, VDS (V) Ciss CondiƟons: Tc=25˚C VAC=25mV f: 1MHz Coss Crss 0.0E+00 1.0E-05 2.0E-05 3.0E-05 4.0E-05 0 100 200 300 400 Coss Stored Energy, Eoss (J) Drain-Source Voltage, VDS (V) CondiƟons: Tc=25˚C VAC=25mV f: 1MHz 0 50 100 150 200 V ,egatloV dlohserhT etaG th (V) Junction Temperature, TJ (˚˚˚C) CondiƟons: VDS=10V ID=50mA

DACO SEMICONDUCTOR CO., LTD. DAC020N065Z1 6HSW www.dacosemi.com.tw - 5 - Typical Device Performance Fig.13 Maximum Power DissipaƟon DeraƟng vs. Case Temperature Fig.14 Drain Current DeraƟng vs. Case Temperature Fig.15 Safe OperaƟng Area Fig.16 Gate Charge CharacterisƟcs Fig.17 Clamped InducƟve Switching Energy vs. Drain Current Fig.18 Clamped InducƟve Switching Energy vs. External Gate Resistor (RG(ext.)) 100 200 300 400 0 25 50 75 100 125 150 175 P ,noitapissiD rewoP xaM D (W) Case Temperature, Tc (˚˚˚C) CondiƟons: VGS=20V 100 125 0 25 50 75 100 125 150 175 Peak Forward Current (A) Case Temperature, Tc (˚˚˚C) CondiƟons: VGS=20V 0.01 0.10 1.00 10.00 100.00 1000.00 0.1 1 10 100 1000 I ,tnerruC niarD D (A) Drain-Source Voltage, VDS (V) CondiƟons: Tc=25˚C Single Pulse Parameter: t PW Gate-Source Voltage, VGS (V) Gate Charge, QG (C) CondiƟons: ID=50A VDS=400V TJ =25˚C 0.0E+00 1.0E-04 2.0E-04 3.0E-04 4.0E-04 0 2 04 06 08 0 1 0 0 E ,ygrenE gnihctiwS SW (J) Drain-Source Current, ID (A) Etot Eoff Eon CondiƟons: Tc=25˚C VDS=400V RG(ext.)=2.7Ω VGS=0/20V 0.0E+00 2.5E-04 5.0E-04 7.5E-04 1.0E-03 1.3E-03 0 5 10 15 20 25 Switching Energy, ESW (J) External Gate Resistance, RG(ext.) (Ω) CondiƟons: Tc=25˚C VDS=400V ID=50A VGS=0/20V Etot Eoff Eon

DACO SEMICONDUCTOR CO., LTD. DAC020N065Z1 6HSW www.dacosemi.com.tw - 6 - Typical Device Performance Fig.19 SchemaƟc of ResisƟve Switching Fig.20 Switching Times Defini Ɵon Fig.21 Transient JuncƟon to Case Thermal Impedance td(on) td(off)tr tf VDS VGS 90% 10% R D.U.T. VDC 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 ,ecnadepmI lamrehTZ th(j-c) (K/W) Pulse time, tPW (sec) D=0.8 D=0.5 D=0.3 D=0.1 D=0.05 D=0.02 D=0.01 Single Pusle

DACO SEMICONDUCTOR CO.,LTD. DAC020N065Z1 Sept 2023 www.dacosemi.com.tw - 7 - DACO Semiconductor reserves the right to make modifications, enhancements, improvements, corrections, or other changes to this document and any product described herein without prior notice. DACO Semiconductor makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. Purchasers are responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations, and safety requirements or standards, regardless of any support or application information provided by DACO Semiconductor. “Typical” parameters that may be provided in DACO Semiconductor datasheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by the customer’s technical experts. DACO Semiconductor products are not designed, authorized, or warranted to be suitable for use in life support, life-critical or safety-critical systems, or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accepts no liability for the inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Purchasers who buy or use DACO Semiconductor products for any unintended or unauthorized applications are required to indemnify and absolve DACO Semiconductor, its suppliers, and distributors from any claims, costs, damages, expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or by any information storage and retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd.