DA227

DA227 DIODES | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

DAN222M/DAN222/DAN202U/DAN202K Diodes DAP222M/DAP222/DAP202U/DAP202K DA227 Switching diode DAN222M / DAN222 / DAN202U / DAN202K DAP222M / DAP222 / DAP202U / DAP202K DA227 zApplication Ultra high speed switching zFeatures 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability. zConstruction Silicon epitaxial planar zMarking DAN222M DAN222 DAN202U DAN202K DAP222M DAP222 DAP202U DAP202K DA227 N P N20 (1) (2)(3) (4) zExternal dimensions (Unit : mm) 2.8 0.2 1.6 0.3∼0.60.150.4 0∼0.1 1.1 0.8 0.1 2.9 0.2 1.9 0.2 0.95 0.95 +0.2 −0.1 +0.2 −0.1 +0.1 −0.06+ 0.1 − 0.05 2.1 0.1 1.25 0.1 0.1Min. 0∼0.1 0.15 0.050.3 0.1 2.0 0.2 1.3 0.1 0.650.65 0.9 0.1 0.3 0.6 0.2 0.20.50.5 1.0 0.1 1.6 0.2 0.3 0.8 0.1 1.6 0.2 −0.05 +0.1 +0.1 −0.05 +0.1 0.05 0.55 0.1 0.7 0.1 0.15 0.05 0∼0.10.1Min. DAN202K / DAP202K DAN202U / DAP202U DAN222 / DAP222 2.1 0.1 1.25 0.1 0.1Min. 0∼0.1 0.9 0.1 0.7 2.0 0.2 1.3 0.1 0.650.65 1.25 0.1 0.6 0.65 0.15 0.05 0.3 0.10.2 0.1 0.2 0.10.2 0.1 DA227 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416 0.8±0.1 0.5±0.05 0.13±0.05 0∼0.1 1.2±0.1 0.32±0.05 0.22±0.05 (1)(2) (3) 0.40.4 1.2±0.1 ROHM : VMD3 EIAJ : JEDEC : DAN222M / DAP222M (All pins have the same dimensions) (All pins have the same dimensions) (All pins have the same dimensions) ROHM : SMD3 EIAJ : SC - 59 JEDEC : SOT - 346 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343 +−+− +− +− +− +− +− +− +− (1) (2) (3) (4)(1) (2) (3) (4)(1) (2) (3) (4) (1) (2) (3) (4)

DAN222M/DAN222/DAN202U/DAN202K Diodes DAP222M/DAP222/DAP202U/DAP202K DA227 zCircuits DAN202K DAN202U DAN222 DAN222M DAP202K DAP202U DAP222 DAP222M DA227 (2) (3) (4)(1) zAbsolute maximum ratings (Ta=25°C) Type Peak reverse voltage VRM (V) DC reverse voltage VR (V) Peak forward current IFM (mA) Surge current (1µs) Isurge (A) Mean rectifying current IO (mA) Power dissipation (TOTAL) Pd(mW) Junction temperature Tj (ºC) P / N Type 80 80 300 100 150 150 NDA227 4 DAN202K 80 80 300 100 4 200 150 N DAP202K 80 80 300 100 4 200 150 P DAN202U 80 80 300 100 4 200 150 N DAP202U 80 80 300 100 4 200 150 P DAN222 80 80 300 100 4 150 150 N DAP222 80 80 300 100 4 150 150 P DAN222M 80 80 300 100 4 150 100 N DAP222M 80 80 300 100 4 150 100 P Storage temperature Tstg (ºC) −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 −55 to +150 zElectrical characteristics (Ta=25°C) Type Forward voltage Reverse currentCapacitance between terminals Reverse recovery time Cond.VF (V) Max. C T (pF) Max. Cond.Cond. IR (µA) Max. trr (ns) Max. Cond. IF (mA ) VR (V) f (MHz)VR (V) VR (V) IF (mA ) DAN202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202K 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP202U 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN222 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP222 1.2 100 0.1 70 3.5 6 1 4 6 5 DAN222M 1.2 100 0.1 70 3.5 6 1 4 6 5 DAP222M 1.2 100 0.1 70 3.5 6 1 4 6 5 1.2 100 0.1 70 3.5 6 1 4 6 5DA227

DAN222M/DAN222/DAN202U/DAN202K Diodes DAP222M/DAP222/DAP202U/DAP202K DA227 zElectrical characteristic curves (Ta=25°C) 125 100 25 50 75 100 125 150 AMBIENT TEMPERATURE :Ta (ºC) POWER DISSIPATION : Pd / Pd Max.(%) Fig.1 Power attenuation curve −30ºC 00.1 0.2 0.5 0ºC Ta=85ºC 25ºC 50ºC FORWARD CURRENT : I F (mA) FORWARD VOLTAGE : V F (V) 1.4 1.6 Fig.2 Forward characteristics (P Type) Ta=100ºC 75ºC 50ºC 25ºC 0ºC −25ºC 1000 100 0.1 0.01 10 20 30 40 50 REVERSE CURRENT : I R (nA) REVERSE VOLTAGE : V R (V) Fig.3 Reverse characteristics (P Type) 00.1 0.2 0.5 0ºC −30ºC Ta=85ºC 50ºC 25ºC 1.4 1.6 FORWARD CURRENT : I F (mA) FORWARD VOLTAGE : V F (V) Fig.4 Forward characteristics (N Type) REVERSE CURRENT : I R (nA) REVERSE VOLTAGE : V R (V) Fig.5 Reverse characteristics (N Type) 0.01 100 1000 0.1 10 20 30 40 80 7060500 Ta=100°C 75°C 50°C 25°C −25°C 0°C 2 4 6 8 10 12 14 16 P Type N Type f=1MHz CAPACITANCE BETWEEN TERMINALS : C T (pF) REVERSE VOLTAGE : V R (V) 18 20 Fig.6 Capacitance between terminals characteristics 10987654321 P Type N Type VR =6V REVERSE RECOVERY TIME : trr (ns) FORWARD CURRENT : I F (mA) Fig.7 Reverse recovery time PULSE GENERATOR OUTPUT 50 Ω SAMPLING OSCILLOSCOPE50Ω 0.01µF 100ns INPUT D.U.T. IR 0.1IR trr OUTPUT Fig.8 Reverse recovery time (trr) measurement circuit

Appendix1-Rev1.0 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.