DA108S1 STMICROELECTRONICS | Alldatasheet
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Technical content
DA112S1 SO8 ARRAYOF 8 OR 12 DIODES LOW INPUT CAPACITANCE SUITABLEFOR DIGITAL LINE PROTECTION
FEATURES
ARRAY of 8 or 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltagesby clamping action.
DESCRIPTION
FUNCTIONAL DIAGRAM : DA108S1 March 1998 - Ed:4 DIODE ARRAY I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 REF 2 I/O 6 REF 1 Application Specific Discretes A.S.D.TM FUNCTIONAL DIAGRAM : DA112S1 I/O 1 I/O 2 I/O 3 I/O 4 REF 2 REF 1 REF 2 REF 1 Protectionof logic side of ISDN S-interface. Protectionof I/O lines of microcontroller. Signal conditioning. APPLICATION IEC1000-4-22level 4: 15kV (air discharge) 8kV (contact discharge) COMPLIESWITH FOLLOWING STANDARDS :
Symbol Parameter Value Unit VRRM Repetitivepeakreverse voltage(forone single diode) 18 V IPP Repetitivepeak forward current * 8/20 µs1 2 A P Power dissipation 0.73 W Tstg Tj Storagetemperature range Maximum operating junction temperature - 55 to + 150 150 TL Maximum lead temperaturefor soldering during 10s. 260 °C * The surge is repeated after the device returns to ambient temperature ABSOLUTE MAXIMUM RATINGS (Tamb =2 5°C) Symbol Parameter Value Unit R th (j-a) Junction to ambient 170 °C/W THERMAL RESISTANCES Symbol Parameter Max. Unit VFP Peak forward voltage I PP = 12A, 8/20µs DA108S1 DA112S1 V VF Forward voltage I F = 50 mA 1.2 V IR Reverse leakage current VR = 15V 2 µA ELECTRICAL CHARACTERISTICS (Tamb =2 5°C) DA108S1 / DA112S1
Fig.2 :Typical peak forward voltage characteristics (8/20µs pulse) V F (V) 0.001 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj = 25 Co IF (A) Typical values VF (V) 11 0 200.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Typical values IF (A) Tj = 25 Co Fig.1 :Input capacitance 2 4 6 8 10 12 14 160 C (pF) G I/O VCC REF2 REF1 DC bias (V) V =5VCC V = 15 VCC Typical values V connected between REF1 and REF2 Input applied : DC bias + 950 mV at 1 MHZ CC (RMS) DA108S1 / DA112S1
APPLICATION 1 :ISDN Interface Protection Residual lightning surges at transformer secondaryare suppressedby DA108S1 APPLICATION 2 :Microcontroller I/O port protection DA1x S 1x 4-6 bit input port VccVcc Vcc Vcc Vcc I/O I/O I/O I/O µc IMPORTANT : DA108S1must imperatively be connected to the reference voltages by REF1 and REF2. DA108S1 / DA112S1
SO8 (Plastic) Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSONMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. REF. DIMENSIONS Millimetres Inches A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.50 0.020 c1 45 °(typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 M 0.6 0.024 S8 ° (max) Packaging:Preferencepackaging is tapeand reel. DA108S1 DA108S DA112S1 DA112S MARKING : Logo, Data Code, ORDER CODE Diode ARRAY Number of diodes Serial DA1 08 S 1 RL RL : Tape and reel : tubes DA108S1 / DA112S1