2SD773 NEC | Alldatasheet
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DESCRIPTION The 2SD773 is designed for use in driver and output stages of audio frequency amplifiers. PACKAGE DIMENSIONS in millimeters (inches) FEATURES © High Total Power Dissipation Pr : 1.0 W (Ta = 25 °C) ona oben © High DC Current Gain hee : 250 TYP. (Ic=100mA) ay 28U) Z| © Low Collector Saturation Voltage Ss 33 Veetsat) : 0.2 V TYP. (Ic=1.0A) _ 33 e i 080.1 F3 at Complementary to the NEC 2SB733 PNP Transistor. 08:01 are - _13e 06-01 as 22 ABSOLUTE MAXIMUM RATINGS (0024) 06-01 ze Maximum Temperatures or Bed . ° i 17 17 I Maximum Power Dissipation (Ta=25 °C) (Hy 18 (0.022) Maximum Voltages and Current (Ta=25 °C) 3 1 emitter © ELECTRICAL CHARACTERISTICS (Ta = 25 °C) heEt DC Current Gain 135 250 600 - VCE=2.0 V, I¢=100 MA brea DC Current Gain 100 - VcE=1.0 V, I¢=1.0A TT Gain Bandwidth Product 50 110 MHz VcE=2.0 V, IE=-10 MA : Cob Output Capacitance 16 35 pF Vop=10 V, Ip =0, f=1.0 MHz : 'cBo Collector Cutoff Current 100 nA Vop=16 V, IE=0 leBo Emitter Cutoff Current 100 nA VeB=6.0 V, Ic=0 VoE(sat) Collector Saturation Voltage 0.20 0.30 v I¢=1.0 A, 1g=50 mA | VBE(sat) Base Saturation Voltage 0.93 1.20 v 1¢=1.0 A, Ig=50 mA Classification of hee [creme Tie Ts Te ets | [fee [ as n0_[ oso |__| in aeo | oto | ) Test Conditions: VoE=2.0 V, I¢=100 mA. NO 424
TYPICAL CHARACTERISTICS (Ta=25 °C) SAFE OPERATING AREAS TOTAL POWER DISSIPATION vs. (TRANSIENT THERMAL. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE RESISTANCE METHOD) COLLECTOR TO EMITTER VOLTAGE 1.2 [SS SS SSS 22 SSS SS EEE] 10 = sf ee TS LTT TTT TTT | 1 10 SS aececiiiomsor ames CELE Bat Fe] aK i | < ope 8 ets oJ Zou + ST Cot i © os 6 SSS LL TS
3 N\\ 5 o,§—_ ee 5 ol fa ot
= om 2 CONT 8 € ° SS SSS 555s Saez 8 | Vi | fy Ty 2 a SORES Poa] boot fe fa IN ee ae ~ A A a RTD pe a a | Pitii rrr yy 1 2 5 10 20 50 100 0 04 08 12 16 20 Ta—Ambient Temperature — °C Voe — Collector to Emitter Voltage —V VcE —Collector to Emitter Voltage ~V | COLLECTOR CURRENT vs. BASE AND COLLECTOR SATURATION COLLECTOR TO EMITTER VOLTAGE > VOLTAGE vs. COLLECTOR CURRENT € det) Tf tT 2. SRS eee 80} — Sm es | = pa 3 | 32 .f i
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rf on |_| 3 8 o2— rr ed & GE et SEU oleae EL el gS eer EH 4 6 8 0 SF 4 oe TT ) VcE —Collector to Emitter Voltage -V 1 2 5 10 20 50 100 200 500 10002000 5000 I¢ —Collector Current — mA BASE TO EMITTER VOLTAGE COLLECTOR CURRENT COLLECTOR TO BASE VOLTAGE i eee ee cae cei SSS e-20y] S| ESR ASAPAH 8 EN Tg ool see ee =] aeanael = eee Tg A fea | Sl Et BS | CAEN UT & see ipieeeg| 8 oT 6 SSS ae ¢ on ae a A s a a ose or Sete oo ee F Aanvaval i TEE rere rey = CTT § (Sy Eseries COTM CN CCU CCT TAI 4 sR 1 10 100" 1000-3000 i 3
2 Fae or ost 10 30
7 er | [| 'c— Collector Current — mA Veg — Collector to Base Voltage —V 2/2eT Ree
04 OS 06 07 08 09 10
Vee — Base to Emitter Voltage —V 425
GAIN BANOWIOTH PRODUCT vs. EMITTER CURRENT a = Voe=2.0V = FERRE ie ee oe 1300p ee eH ass 2 10 eee rae s = 2 Saneswel apd boris RS arene esos’ 6 § ape Boke td § | SSS
1 HRI REDE RESLa
=1 -3 -10 -30 - 100-300 - 1000-3000 Ig — Emitter Current -mA 426