D669A

2SD669 SECOS | Alldatasheet

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n Transition frequency fT VCE=5V, IC= 150mA 140 MHz Cob VCB=10V , IE=0,f=1MHz 14 pF Base-emitter voltage VBE * VCE=5V,IC= 150mA 1.5 V Collector output capacitance Rank B C D 2SD669 60 - 120 100 - 200 160 - 320 2SD669A 60 - 120 100 - 200 ---- 0.76±0.1 Dimensions in Millimeters Collector-emitter saturation voltage VCE (sat) * IC=500 mA, IB=50mA 1 V hFE(1) * VCE=5V, IC= 150mA 60 DC current gain hFE(2) * VCE=5V, IC= 500mA 2SD669 2SD669A 320 200 Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1 A ， IE=0 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA ， IB=0 V Collector-emitter breakdown voltage V(BR)EBO IE= 1 A， Ic=0 5 V Collector cut-off current ICBO VCB=160 V , IE=0 10 μA Emitter cut-off current IEBO VEB= 4V , IC =0 10 μA 180 2SD669 2SD669A 120 160 m m The 2SD669 and 2SD669A are grouped by hFE1 as follows. -Jul -2007 Rev. B10 Page 1 of 3

FEATURES

PCM : 1mW（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Collector-emitter voltage VCEO 2SD669 2SD669A : 120 V : 160 V CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Elektronische Bauelemente 2SD669/2SD669A NPN Type Plastic Encapsulate Transistors TO-126C 7.6±0.2 1: Emitter 2: Collector 3: Base 4.0±0.1 10.8±0.2 2.2±0.1 15.5±0.2 1.27±0.1 2.29 Typ. 4.58±0.1 0.5±0.1 1.3±0.2 2.7±0.2 3.1± 0.1O 1 2 3 http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free

10-Jul-2007 Rev. B Page 2of 3 2SD669/2SD669A NPN Type Plastic Encapsulate Transistors Maximum Collector Dissipation Curve 0 50 100 150 Case temperature TC (°C) Collector power dissipation PC (W) 1.0 0.3 Collector current IC (A) 0.01 0.03 0.1 33 010 3001 100 Collector to emitter voltage VCE (V) Area of Safe Operation DC Operation(TC = 25°C) (13.3 V, 1.5 A) 3.5 5.5 4.04.55.0 Typical Output Characteristecs TC = 25°C P C = 20 W IB = 0 0.5 mA 1.0 1.5 2.0 2.5 3.0 1.0 0.8 0.6 0.4 0.2 01 0 20 Collector to emitter voltage VCE (V) 504030 Collector current IC (A) Typical Transfer Characteristics 500 200 100 Collector current IC (mA) Base to emitter voltage VBE (V) VCE = 5 V Ta = 75 25–25 300 250 200 150 100 13 0 DC current transfer ratio hFE 300100103 Collector current IC (mA) 1,000 3,000 DC Current Transfer Ratio vs. Collector Current VCE = 5 V Ta = 75°C –25 1.2 1.0 0.8 0.6 0.4 0.2 1 3 30 30010 100 1,000 Collector to Emitter Saturation Voltage vs. Collector Current Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) TC = 75 IC = 10 IB http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual

10-Jul-2007 Rev. B Page 3 of 3 2SD669/2SD669A NPN Type Plastic Encapsulate Transistors 1.2 1.0 0.8 0.6 0.4 0.2 1 3 30 30010 100 1,000 Base to Emitter Saturation Voltage vs. Collector Current Collector current IC (mA) Base to emitter saturation voltage VBE(sat) (V) IC = 10 IB TC = –25°C 240 200 160 120 10 300 Gain bandwidth product fT (MHz) 1,00010030 Collector current IC (mA) Gain Bandwidth Product vs. Collector Current VCE = 5 V Ta = 25°C 200 100 11 0 Collector output capacitance Cob (pF) 502052 Collector to base voltage VCB (V) 100 Collector Output Capacitance vs. Collector to Base Voltage f = 1 MHz IE = 0 http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual