A2T21H100-25SR3 NXP | Alldatasheet
Document overview
- Manufacturer or author: NXP Semiconductors
- PDF pages: 16
Technical content
Features
Advanced High Performance In- Package Doherty Greater Negative Gate- Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems Document Number: A2T21H100- 25S Rev. 1, 01/2022 NXP Semiconductors Technical Data 2110–2170 MHz, 18 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR A2T21H100- 25SR3 NI- 780S- 4L4S Figure 1. Pin Connections
- Device cannot operate with the VDD current
supplied through pin 5 and pin 8. improvements in the design of its products.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
2140 MHz
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available athttp://www.nxp.com/RF
- Each side of device measured separately.
Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 5. Ordering Information
- Part internally matched both on input and output.
- Measurements made with device in an asymmetrical Doherty configuration.
- P3dB = Pavg +7 . 0d Bw h e r ePavg is the average output power measured using an unclipped W- CDMA single- carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
- Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Figure 2. A2T21H100- 25SR3 Test Circuit Component Layout Table 6. A2T21H100- 25SR3 Test Circuit Component Designations and Values
Figure 3. Single- Carrier Output Peak- to- Average Ratio Compression (PARC) Broadband Performance @ Pout = 18 Watts Avg. Figure 4. Intermodulation Distortion Products Figure 5. Output Peak- to- Average Ratio
17.6 Gps,P O W E RG A I N( d B )
Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Single- Carrier W- CDMA Power Gain, Drain Figure 7. Broadband Frequency Response
2110 MHz
2170 MHz
2140 MHz2110 MHz
Table 7. Carrier Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 8. Carrier Side Load Pull Performance — Maximum Drain Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 9. Peaking Side Load Pull Performance — Maximum Power Tuning (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. Table 10. Peaking Side Load Pull Performance — Maximum Drain Efficiency Tuning (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. source = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
PACKAGE INFORMATION
Note: Output leads (pin 6 and 7) have a small square hole that is used as a reference location in the manufacturing process.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description
0 June 2015 Initial release of data sheet
1 Jan. 2022 Package Outline Drawing: 98ASA00406D package outline updated to Rev. A, pp. 13–14 (Rev. A updated the company name to NXP Semiconductors, N.V.). Added a note describing package feature used for manufacturing process, p. 14.
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