D5SC4MR SHINDENGEN | Alldatasheet
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Copyright & Copy;2000 Shindengen Electric Mfg.Co.LtdCopyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONSOUTLINE DIMENSIONS RATINGSRATINGS SHINDENGENSHINDENGEN Unit : mmUnit : mmCase : ITO-220Case : ITO-220 Switching power supplySwitching power supply DC/DC converterDC/DC converter Home Appliances, Office EquipmentHome Appliances, Office Equipment TelecommunicationTelecommunication APPLICATIONAPPLICATION PPRRSMRRSM avalanche guaranteed avalanche guaranteed Fully Isolated MoldingFully Isolated Molding FEATURESFEATURES Schottky Rectifiers (SBD)Schottky Rectifiers (SBD) DualDual Absolute Maximum Ratings (If not specified Tc=25) Item Symbol Conditions RatingsUnit Storage Temperature Tstg -40\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 40 V Repetitive Peak Surge Reverse VoltageVRRSM Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=1365 A Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=12550 A Repetitive Peak Surge Reverse PowerPRRSM Pulse width 10Ês, Rating of per diode, Tj=25330 W Dielectric Strength VdisTerminals to case, AC 1 minute 1.5 kV Mounting Torque TOR (Recommended torqueF0.3N¥m) 0.5 N¥m Electrical Characteristics (If not specified Tc=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=2.5A, Pulse measurement, Rating of per diodeMax.0.55V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diodeMax.2.5mA Junction Capacitance Cj f=1MHz, VR=10V, Rating of per diode Typ.116 pF Thermal Resistance Æjcjunction to case Max.3.3/W
0.1 D5SC4MR Tc=150°C [MAX] Tc=25°C [MAX] Pulse measurement per diode Tc=150°C [TYP] Tc=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
0.1 1 10 0.05 0.50.2 20 5052 200 500 2000 5000 Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tc=25°C TYP per diode Junction Capacitance
0.01 0.1 100 1000 0 5 10 15 20 25 30 35 40 D5SC4MR Tc=150°C [MAX] Tc=150°C [TYP] Pulse measurement per diode Tc=125°C [TYP] Tc=100°C [TYP] Tc=75°C [TYP] Reverse Voltage VR [V] Reverse Current I R [mA]
0.3 Reverse Power Dissipation Tj = 150°C SIN 0.2 0.5 D=0.05 DC 0.1 0.8 tp VR T D=tp/T Reverse Voltage VR [V] Reverse Power Dissipation PR [W]
T D=tp/T 0 1 2 3 4 5 6 7 8 D5SC4MR 0.3 Forward Power Dissipation Tj = 150°C SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T VR 0 20 40 60 80 100 120 140 160 D5SC4MR 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Case Temperature Tc [ °C] Average Rectified Forward Current I O [A]
T D=tp/T 0 20 40 60 80 100 120 140 160 D5SC4MR 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Heatsink Temperature Tf [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 1 10 100 D5SC4MR 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=125°C before surge current is applied
0.5IRP VRP IR PRRSM = IRP × VRP 100 120 0 50 100 150 SBD Repetitive Surge Reverse Power Derating Curve Junction Temperature Tj [ °C] PRRSM Derating [%]
0.1 1 10 100 SBD Repetitive Surge Reverse Power Capability Pulse Width tp [µs] PRRSM(tp) / PRRSM(tp=10µs) Ratio tp IRP VR 0.5IRP VRP IR PRRSM = IRP × VRP