F55NF06 THINKISEMI | Alldatasheet

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/g132 DESCRIPTION ThinkiSemi50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. /g132 FEATURES * R DS(ON) = 23m/g525@V GS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( C RSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability /g132 SYMBOL 1.Gate 3.Source 2.Drain TO-251/IPAK U55NF06 TO-251/IPAK P55NF06 TO-220 D55NF06 TO-252/DPAK /g132 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V T C = 25°C 50 A Continuous Drain Current T C = 100°C I D 35 A Pulsed Drain Current (Note 2) I DM 200 A Single Pulsed (Note 3) E AS 480 mJ Avalanche Energy Repetitive (Note 2) E AR 13 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220 120 W Power Dissipation (T C =25°C) TO-252 P D 136 W Junction Temperature T J +150 °C Operation and Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by T J 3. L=0.38mH, I AS =50A, V DD =25V, R G =20/g525, Starting T J =25°C 4. I SD /g14850A, di/dt/g148300A//g541s, V DD /g148BV DSS , Starting T J =25°C /g132APPLICATION Networking DC-DC Power System Auotmobile Convert System Power Supply etc.. TO-251 W 2 3 2 31 TO-220/TO-220F F55NF06 TO-220F TO-252/DPAK 55NF06 Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/6

50 AMPERE 60 VOLT

Rev.02

/g132 THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-220 62 °C/W TO-251 Junction to Ambient TO-252 /g537 JA 100 °C/W TO-220 1.24 °C/W 1.28 Junction to Case TO-252 /g537 JC 1.1 °C/W /g132 ELECTRICAL CHARACTERISTICS C = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 /g541A 60 V Drain-Source Leakage Current I DSS V DS = 60 V, V GS = 0 V 10 /g541A Forward V GS = 20V, V DS = 0 V 100 nA Gate-Source Leakage Current Reverse I GSS V GS = -20V, V DS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BVϦ DSS /ƸT J I D = 250 /g541A, Referenced to 25°C 0.07 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 /g541A 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, I D = 25 A 18 23 m/g525 DYNAMIC CHARACTERISTICS Input Capacitance C ISS 900 1220 pF Output Capacitance C OSS 430 550 pF Reverse Transfer Capacitance C RSS V GS = 0 V, V DS = 25 V f = 1MHz 80 100 pF /g132 ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 40 60 ns Turn-On Rise Time t R 100 200 ns Turn-Off Delay Time t D(OFF) 90 180 ns Turn-Off Fall Time t F V DD = 30V, I D =25 A, R G = 50/g525 (Note 1, 2) 80 160 ns Total Gate Charge Q G 30 40 nC Gate-Source Charge Q GS 9.6 nC Gate-Drain Charge Q GD V DS = 48V, V GS = 10 V I D = 50A (Note 1, 2) 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS ANDʳMAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD I S = 50A, V GS = 0 V 1.5 V Maximum Continuous Drain-Source Diode Forward Current I S 50 A Maximum Pulsed Drain-Source Diode Forward Current I SM 200 A Reverse Recovery Time t RR 54 ns Reverse Recovery Charge Q RR I S = 50A, V GS = 0 V dI F / dt = 100 A//g541s 81 /g541C Notes: 1. Pulse Test: Pulse Width /g148300/g541s, Duty Cycle/g1482% 2. Essentially independent of operating temperature °C/W 62 °C/W TO-251 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/6Rev.02

/g132 TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L V DD Driver V GS R G V DS D.U.T. + * dv/dt controlled by R G * I SD controlled by pulse period * D.U.T.-Device Under Test P. W. Period D=V GS (Driver) I SD (D.U.T.) I FM , Body Diode Forward Current di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop V DD 10V V DS (D.U.T.) V GS P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/6Rev.02

/g132 TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit ʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳʳ Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. R G 10V V DS L V DD t p V DD t p Time BV DSS I AS I D(t) V DS(t) Fig. 4A Unclamped Inductive Switching Test Circuit ʳʳʳFig. 4B Unclamped Inductive Switching Waveforms 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 4/6Rev.02

/g132 TYPICAL CHARACTERISTICS Drain Current, I D (A) Drain Current, I D (A) 0.0 Drain Current, I D (A) 40 80 200 100 140 0.5 1.0 1.5 2.0 2.5 On-Resistance Variation vs. Drain Current and Gate Voltage 0.2 Source-Drain Voltage, V SD (V) On State Current vs. Allowable Case Temperature 1.6 V GS =20V *Note: 1. V GS =0V 2. 250μs Test 25°C 150°C V GS =10V 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 5/6Rev.02

/g132 TYPICAL CHARACTERISTICS(Cont.) -100 Drain-Source Breakdown Voltage, BV DSS (Normalized) Junction Temperature, T J (°C) -50 50 200 *Note: 1. V GS =0V 2. I D =250μA 100 150 1.2 Breakdown Voltage Variation vs. Junction Temperature 1.1 1.0 0.9 0.8 Drain-Source On-Resistance, R DS(ON) (Normalized) -50 50 100 150 3.0 On-Resistance Variation vs. Junction Temperature 2.0 1.0 0.5 0.0 1.5 2.5 Junction Temperature, T J (°C) *Note: 1. V GS =10V 2. I D =25A Drain-Source Voltage, V DS (V) Drain Current , I (A) Maximum Safe Operating Drain Current, I D (A) Case Temperature, T C (°C) 100 150 Maximum Drain Current vs. Case Temperature 1255025 Operation in This Area by R DS (on) *Note: 1. T c =25°C 2. T J =150°C 3. Single Pulse 100μs 1ms 10ms 10ms Thermal Response, Z /g455JC (t) 55NF06 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 6/6Rev.02