D468

2SD468_15 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 4 Copyright © 2008 Unisonic Technologies Co., Ltd QW-R211-003.B LOW FREQUENCY POWER AMPLIFIER „ FEATURES * Low frequency power amplifier * Complement to 2SB562 TO-92 TO-92NL *Pb-free plating product number: 2SD468L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box 2SD468-x-T92-K 2SD468L-x-T92-K TO-92 E C B Bulk 2SD468-x-T9N-B 2SD468L-x-T9N-B TO-92NL E C B Tape Box 2SD468-x-T9N-K 2SD468L-x-T9N-K TO-92NL E C B Bulk

2SD468 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw Q W - R 2 1 1 - 0 0 3 . B „ ABSOLUTE MAXIMUM RATINGS (Ta=25¥, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Collector Current I C 1 A Collector Peak Current I CP 1.5 A Collector Power Dissipation P C 0.9 W Junction Temperature T J +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25¥, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT CollectorBase Breakdown Voltage BVCBO Ic=10 µA, IE=0 25 V CollectorEmitter Breakdown Voltage BVCEO Ic=1mA, R BE=∞ 20 V EmitterBase Breakdown Voltage BVEBO I E=10µA, IC=0 5 V Collector Cut-Off Current I CBO V CB=20V, IE=0 1 µA DC Current Transfer Ratio h FE V CE=2V, Ic=0.5A (Note) 85 240 CollectorEmitter Saturation Voltage VCE(SAT) Ic=0.8A, IB=0.08A (Note) 0.2 0.5 V BaseEmitter Voltage VBE V CE=2V, Ic=0.5A (Note) 0.79 1 V Gain Bandwidth Product f T V CE=2V, Ic=0.5A (Note) 190 MHz Collector Output Capacitance C ob V CB=10V, IE=0, f=1MHz 22 pF Note: Pulse test „ CLASSIFICATION OF hFE RANK B C RANGE 85 - 170 120 - 240

2SD468 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 www.unisonic.com.tw Q W - R 2 1 1 - 0 0 3 . B „ TYPICAL CHARACTERISTICS Collector Power Dissipation, PC (W) Collector Current, IC (A) P C=0.9W Base to Emitter Voltage, VBE (V) 100 300 1,000 Typical Transfer Characteristics Collector current, IC (mA) Ta=75¥ 25¥ VCE=2V 200 500 1 3 10 30 100 300 1,000 Collector Current, IC (mA) DC Current Transfer Ratio, hFE DC Current Transfer Ratio vs. Collector Current 100 1,000 2,000 5,000 VCE=2V Ta=75¥ 25¥

2SD468 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 www.unisonic.com.tw Q W - R 2 1 1 - 0 0 3 . B „ TYPICAL CHARACTERISTICS(Cont.) 51 0 5 0 2025 100 200 Collector to Base Voltage, VCB (V) Collector Output Capacitance vs. Collector to Base Voltage f=1MHz IE=0 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.