D4203D UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD D4203D Preliminary NPN SILICON TRANSISTOR www.unisonic.com.tw 1 of 2 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R204-026.a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC D4203D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC D4203D is intended to be used in energy-saving lights, electronic ballasts, high frequency switching power supplies, high frequency power transforms or common power amplifier, etc. FEATURES * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * High Resistance to Shock * Built-In Diode INTERNAL SCHEMATIC DIAGRAM E (3) B (1) C (2) ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen-Free 1 2 3 D4203DL-T60-K D4203DG-T60-K TO-126 B C E Bulk
D4203D Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 2 www.unisonic.com.tw Q W - R 2 0 4 - 0 2 6 . a ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector- Base Voltage V CBO 700 V Collector-Emitter Voltage (IB=0) V CEO 400 V Emitter-Base Voltage V EBO 9 V Collector Current (DC) I C 2.0 A Collector Current (pulse) I CP 4.0 A Total Power Dissipation P C 20 W Junction Temperature T J 150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse Width = 5.0ms, Duty Cycle < 10%. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Case θJC 6.25 °C/W ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage V CEO(SUS) IC=10mA, IB=0 400 V Collector -Base Breakdown Voltage BV CBO I C=1mA, IE=0 700 V Emitter-Base Breakdown Voltage BV EBO I E =1mA, IC=0 9 V Collect - Base Cut-off Current I CBO V CB=680V, IE=0 100 μA Collect - Emitter Cut-off Current I CEO V CE=400V,IB=0 50 μA Emitter - Base Cut-off Current I EBO V EB=7V, IC=0 10 μA hFE1 VCE =5V, IC=5mA 6 40 DC Current Gain hFE2 VCE =10V, IC=200 mA 8 40 Base-Emitter Saturation Voltage VBE(SAT) IC=1A, IB=0.25A 1.8 V Fall Time tF 0.7 μsResistive Load Storage Time tS VCC=24 V, IC=2A, IB1=-IB2=0.4A 4 μs Current Gain Bandwidth Product fT VCE=10V, IC=0.5A 4 MH Z UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.