D4120P UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD D4120P Preliminary NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 2 Copyright © 2011 Unisonic Technologies Co., Ltd Q W - R 2 0 1 - 0 8 4 . a MEDIUM VOLTAGE FAST-SWITCHING NPN TRANSISTOR DESCRIPTION The UTC D4120P is a medium voltage fast-switching NPN power transistor. It is characterized by medium breakdown voltage, high current capability, high switching speed and high reliability. The UTC D4120P is intended to be used in energy-saving lights, electronic ballasts, a power transform or a common power amplifier, etc. FEATURES * Medium breakdown voltage * High current capability * High switching speed * High reliability * RoHS-compliant product EQUIVALENT CIRCUIT B (1) E (3) C (2) ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing D4120PL-T92-B D4120PG-T92-B TO-92 B C E Tape Box D4120PL-T92-K D4120PG-T92-K TO-92 B C E Bulk D4120PL-T92-R D4120PG-T92-R TO-92 B C E Tape Reel
D4120P Preliminary NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 2 www.unisonic.com.tw VER.a ABSOLUTE MAXIMUM RATINGS (TC=25°C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 350 V Collector-Emitter Voltage V CEO 200 V Emitter-Base Voltage V EBO 7 V Continuous Collector Current I C 1.5 A Collector Power Dissipation P C 1 W Junction Temperature T J 150 °C Storage Temperature T STG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 125 °C/W ELECTRICAL CHARACTERISTICS (TC =25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Emitter Sustaining Voltage V (BR)CEO I C=10mA, IB=0 200 V Collector -Base Breakdown Voltage V (BR)EBO I C=1mA, IE=0 350 V Collector -Base Breakdown Voltage V (BR)CBO I C=0, IE=1mA 7 V Collector Cut-Off Current I CBO V CB=300V, IE=0 100 µA Collect Emitter Cut-off Current ICEO V CE=200V, IB=0 50 µA Emitter Cut-Off Current I EBO V EB=7V, IC=0 10 µA hFE(1) I C=0.2A, VCE=5V 8 50 Static Forward Current Transfer Ratio hFE(2) I C=1.5A, VCE=5V 5 VCE(sat) (1) I C=0.4A,IB=0.1A 0.5 V Collector-Emitter Saturation Voltage VCE(sat) (2) I C=1A,IB=0.5A 2 V Base-Emitter Saturation Voltage V BE(sat) I C=1A, IB=0.25A 1.5 V Fall Time t f VCC=24V, IC=0.5A, IB1=-IB2=0.1A 0.5 µS Storage Time T stg VCC=24V, IC=0.5A, IB1=-IB2=0.1A 4 µS Input Resistance f T V CE=10V, IC=0.5A, 4 MHz UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.