D3SB20 PFS | Alldatasheet
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- 低的反向漏电流 Low reverse leakage
- 较强的正向浪涌承受能力 High forward surge capability 机械数据 Mechanical Data 封装 塑料封装 Case: Molded Plastic 极性 标记模压或印于本体 Polarity: Symbols molded or marked on body 安装位置 任意 Mounting Position: Any +~~- .995(25.3) .983(24.7) .134(3.4) .122(3.1) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) .303(7.7) .287(7.3) .303(7.7) .287(7.3) .074(1.9) .059(1.5) .146(3.7) .130(3.3) .303(7.7) .287(7.3) .708(18.0) .669(17.0) .157 (4.0) .602(15.3) .578(14.7) Unit inch mm .031(0.8) .023(0.6) .114(2.8) .098(2.5) .150(3.8) .134(3.4) .150(3.8) .134(3.4) .189(4.8) .173(4.4) .382(9.7) .366(9.3) .134(8.4) .122(3.1) 重量 : 4.6 克 Weight:4.6 Grams
- 浪涌承受能力：170 A S urge overload rating:170 Amperes peak D3SB20 D3SB40 D3SB60 D3SB80 塑封硅整流桥堆 反向电压 200---800V 正向电流 4.0 A Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800 V Forward Current 4.0A D3SB20 D3SB40 D3SB60 D3SB80 加散热片 T C =108 无散热片 Ta=25 I F(AV) 2.3
特性曲线 Characteristic Curves 正向特性曲线（典型值） 正向电压 V F (V) 环境温度 Ta( TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE V F Instantaneous Forward Voltage (V) Tamb, ambient temperature (°C) 正向电流降额曲线 正向电流 I F (A) 平均正向电流 I F(AV) (A) I F Instantaneous Forward Current (A) I F(A) Average Forward Rectified Current (A) 0.1 0 40 80 120 1600 2.0 4.0 1.0 3.0 +~~- P.C.B. on glass-epoxi substrate soldering land 5mmф sine wave R-load free in air 通过电流的周期 峰值正向浪涌电流 I FSM (A) 浪涌特性曲线（最大值） MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT Number of Cycles at 60 Hz. I FSM Peak Forward Surge Current (A) 平均整流电流 I [A] FORWARD POWER DISSIPATION AVERAGE RECGIFIED FORWARD CURRENT I o (A) FORWARD POWER DISSIPATION P F (W)) 功率损耗曲线 功率损耗 P(W) 10 10002 5 2 0 5 0 100 200 I FSM 10mS 10mS
1 Cycle
Tj=25 before Sine wave Tj=150℃ 16 27 34 环境温度 T C FORWARD CURRENT DERATING CURVE Case Temperature Tc(℃) 正向电流降额曲线 平均正向电流 I F(AV) (A) I F(A) Average Forward Rectified Current (A) 0 40 80 120 1600 3.0 6.0 1.5 4.5 +~ ~- Tc-sensing point sine wave R-load with heatsink Tc Pulse measurement per diode Tl=150℃ Tl=25℃