D3SB10 SSE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
FEATURES
- Glass passivated junction chip
- Ideal for printed circuit board
- Reliable low cost construction utilizing molded plastic technique
- Surge overload rating: 120 A peak
- High temperature soldering guaranteed: 250 oC/10sec/ 0.375" (9.5mm) lead length at 5 lbs tension MECHANICAL DATA
- Terminal: Plated leads solderable per MIL-STD 202E, method 208C
- Case: UL-94 Class V-O recognized flame retardant epoxy
- Polarity: Polarity symbol marked on body
- Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SYMBOL D3SB D3SB D3SB D3SB D3SB
80 UNITS
VRRM 100 200 400 600 800 V VRMS 70 140 280 420 560 V VDC 100 200 400 600 800 V VF V Maximum DC Reverse Current Ta=25oC µA (at rated DC blocking voltage) T a=125oC µA Storage and Operating Junction Temperature TSTG,TJ oC http://www.sse-diode.com D3SB10 THRU D3SB80 Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Peak Forward Surge Current (8.3ms single half sine-wave superimposed on rated load) 500 120 Maximum Instantaneous Forward Voltage (at forward current 2.0A DC) I R IFSM SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER VOLTAGE: 100 TO 800V CURRENT: 4.0A -55 to + 150 RATINGS (Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load, derate current by 20%) Maximum Average Forward Rectified Current (Ta=50oC) IF(AV) 4.0 A A 1.1 D3-SB Dimensions in inches and (millimeters) TECHNICAL SPECIFICATION