2SD313 WEITRON | Alldatasheet

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http://www.weitron.com.tw TO-220 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Value UnitRating Characteristics Symbol Min Max Unit

ELECTRICAL CHARACTERISTICS

(TA=25ºC) Storage Temperature Junction Temperature Total Device Disspation Collector Current Collector to Base Voltage Collector to Emitter Voltage Collector to Base Voltage BVCEO BVCBO Max V V Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC=100µA, IE=0 IC=1mA, IB=0 BVEBO ICBO ICEO 5.0 -- V 100- - µA 1.0- - mA Emitter-Base Breakdown Voltage IE=100µA, IC=0 Collector Cut-Off Current VCB=60V, IE=0 Emitter-Cut-Off Current VEB=60V,IE=0 IEBO 100- - µAEmitter-Cut-Off Current VEB=4.0V, IC=0 W W/˚C A V V V -55 to +150 +150 1.75 0.24 3.0 5.0 1. BASE 2. COLLECTOR 3. EMITTER NPN Silicon Epitaxial Power Transistor BASE COLLECTOR EMITTER Lead(Pb)-FreePb 1/4 06-Feb-07 * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 Features: TA=25°C TC=25°C Derate above 25°C

http://www.weitron.com.tw ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain VCE= 2V, IC= 1A VCE= 2V, IC= 0.1A VCE= 2V, IC = 1A Collector-Emitter Saturation Voltage IC= 2A, IB= 200mA Base-Emitter On Voltage Transition Frequency VCE= 5V, IC= 500mA Transition Frequency VCB= 10V, IE= 0 , f=1MHz hFE1 hFE2 320 VCE(sat) VBE - - 1.0 V - - 1.5 V - 8 - MHzfT - 65 - pFCob CLASSIFICATION OF hFE(1) C D FERank 40-80 60-120 100-200 160-320Range 2/4 06-Feb-07

http://www.weitron.com.tw 2SD313 Fig.1 DC Current Gain 100 1000 10 100 1000 10000 Collector Current (mA) h EF Fig.2 Saturation Voltage vs Collector Current 100 1000 10000 10 100 1000 10000 Collector Current (mA) V ,egatloV noitarutaS )TAS(EC )Vm( IC=10IB 100 1000 10000 10 100 1000 10000 Colle ctor Current (mA) V )TAS(EB )Am( IC=10IB Fig.4 SOA 0.1 1 10 100 Collector to Emitter Voltage (V) )A( tnerruC rotcelloC 100 1000 10000 10 100 1000 10000 Collector Current (mA) V )NO(EB )Vm( VCE=2V 3/4 06-Feb-07 Fig.3 VBE(sat) vs IC Fig.5 VBE(on) vs IC

http://www.weitron.com.tw 2SD313 Dim A B C D E G F H L Min 4.47 2.52 0.71 1.17 0.31 1.17 10.01 Max TO-220 TO-220OutlineDimensions unit:mm 4.67 2.82 0.91 1.37 0.53 1.37 10.31 12.446 8.50 8.90 12.06 4.98 2.59 0.00 13.4 3.56 3.73 5.18 2.89 0.30 13.8 3.96 3.93 2.54TYPB L C H G A E F D A1L1B1 Φ 4/4 06-Feb-07