2SD313 DCCOM | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR TO-220AB Dimensions in inches and (millimeters) .625(15.87) .500(12.70) .055(1.39) .045(1.15) .185(4.70) .173(4.40) .405(10.28) .380(9.66) .295(7.49) .220(5.58) .350(8.90) .330(8.38) .640 (16.25) Typ .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 (2.54)Typ .024(0.60) .014(0.35) Φ.151 Φ(3.83) Typ 1 2 3 Pinning 1 = Base 2 = Collector 3 = Emitter
Description
Designed for general-purpose amplifier and switching applications. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5 V Collector Current IC 3 A Total Power Dissipation PD 2 W Total Power Dissipation(TC=25oC) PD 30 W Junction Temperature TJ +150 oC Storage Temperature TSTG -55 to +150 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 60 - - V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 60 - - V IC=10mA, IB=0 Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=100µA, IC=0 Collector Cutoff Current ICBO - - 0.1 mA VCB=20V, IE=0 ICEO - - 5 mA VCE=60V, IB=0 Emitter Cutoff Current IEBO - - 1 mA VEB=4V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1 V IC=2A, IB=0.2A Base-Emitter On Voltage(1) VBE(on) - - 1.5 V IC=1A, VCE=2V DC Current Gain(1) hFE1 40 - 320 - IC=1A, VCE=2V hFE2 40 - - - IC=0.1A, VCE=2V Transition Frequency fT - 8 - MHz IC=0.5A, VCE=5V
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Rank C D E F Range 40~80 60~120 100~200 160~320 Classification of hFE1