D30E60 THINKISEMI | Alldatasheet
Document overview
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Technical content
30Amperes,600Volts SwitchMode Ultrafast Recovery Epitaxial Diode Pb
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE D30E60 using lastest matured FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. D30E60 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.08T TO-220AC/TO-220CB-2P Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 600 V Continuous forward current IF(AV) Tc =110°C 30 Single pulse forward current IFSM Tc =25°C 240 Maximum repetitive forward current IFRM Square wave, 20kHZ 55 A Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C Electrical characteristics (Ta=25°Cunless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units Breakdown voltage Blocking voltage VBR, VR IR=100µA 600 IF=30A 1.30 1.60 Forward voltage (Per Diode) VF IF=30A, Tj =125°C 1.05 1.40 V VR= VRRM 20 Reverse leakage current(Per Diode) IR Tj=150°C, VR=600V 200 µA IF=0.5A, IR=1A, IRR=0.25A 35 45 Reverse recovery time(Per Diode) trr IF=1A,VR=30V, di/dt =-200A/us 28 35 ns Thermal characteristics Paramter Symbol Typ Units Junction-to-Case RθJC 1.6 ℃/W Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside
Electrical performance (typic) 0.10 1.00 10.00 100.00 Forward Current IF(A) Forward Voltage VF(V) Forward Characteristic(typ.) Ta=25℃ Ta=125℃ 0.00 0.01 0.10 1.00 10.00 1 10 100 Reverse Current IR(uA) Reverse Voltage VR(V) Reverse Characteristic(typ.) Ta=25℃ Ta=125℃
Package Information
Dimensions(millimeters) Symbol Min. Max. A 4.30 4.70 A1 1.17 1.37 A2 2.20 2.60 b 0.60 1.00 b1 1.17 1.37 b2 1.90 2.30 c 0.30 0.70 e 2.34 2.74 E 9.70 10.1 E1 8.50 8.90 H 15.5 15.9 H1 9.00 9.40 H2 1.10 1.50 H3 1.50 1.90 H4 12.58 13.58 H5 2.80 3.20 G 2.60 3.00 ФP 3.40 3.80 © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.08T D30E60