IDP30E60 INFINEON | Alldatasheet

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Technical content

Rev.2 Page 1 IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary VRRM 600 V IF A VF 1.5 V Tjmax 175 Feature

  • 600 V EmCon technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage
  • 175°C operating temperature
  • Easy paralleling P-TO220-3.SMD P-TO220-2-2. Pin 1 PIN 2 PIN 3 C A NC C A Marking D30E60 D30E60 Type Package Ordering Code IDP30E60 P-TO220-2-2. Q67040-S4488 IDB30E60 P-TO220-3.SMD Q67040-S4376 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 600 V Continous forward current TC=25°C TC=90°C IF 52.3 34.9 A Surge non repetitive forward current TC=25°C, tp=10 ms, sine halfwave IFSM 117 Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 IFRM Power dissipation TC=25°C TC=90°C Ptot 142.9 80.9 W Operating and storage temperature Tj , Tstg -55...+175 Soldering temperature 1.6mm(0.063 in.) from case for 10s TS 255

Rev.2 Page 2 IDP30E60 IDB30E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC 1.05 K/W Thermal resistance, junction - ambient, leaded RthJA SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current VR=600V, Tj=25°C VR=600V, Tj=150°C IR 2500 µA Forward voltage drop IF=30A, Tj=25°C IF=30A, Tj=150°C VF 1.5 1.5 V 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

Rev.2 Page 3 IDP30E60 IDB30E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C trr 126 171 178 ns Peak reverse current VR=400V, IF = 30A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =30A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =30A, diF/dt=1000A/µs, Tj=150°C Irrm A Reverse recovery charge VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF =30A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF =30A, diF/dt=1000A/µs, Tj=150°C Qrr 1100 1950 2150 nC Reverse recovery softness factor VR=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C VR=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C VR=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C S 4.6 4.8

Rev.2 Page 4 IDP30E60 IDB30E60

2 Diode forward current

IF = f(TC) parameter: Tj≤ 175°C 100 125 175 TC A IF

1 Power dissipation

Ptot = f (TC) parameter: Tj ≤ 175 °C 100 125 175 TC 100 110 120 W 150 Ptot 3 Typ. diode forward current IF = f (VF) 0.5 1.5 V 2.5 VF A IF -55°C 25°C 100°C 150°C 4 Typ. diode forward voltage VF = f (Tj) -60 -20 100 160 Tj 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 V VF 15A 30A 60A

Rev.2 Page 5 IDP30E60 IDB30E60 5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700

800 A/µs

6 Typ. reverse recovery charge Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C 200 300 400 500 600 700 7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 A Irr 60A 30A 15A 8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C 200 300 400 500 600 700 S 60A 30A 15A

Rev.2 Page 6 IDP30E60 IDB30E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp K/W IDP30E60 ZthJC single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

Rev.2 Page 7 IDP30E60 IDB30E60 TO-220-2-2 symbol [mm] [inch] min max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L M N P 1.10 1.40 0.0433 0.0551 T U V W X 0.00 0.40 0.0000 0.0157 0.26 typ. 6.6 typ. 0.51 typ. 13.0 typ. 7.5 typ. 0.295 typ. 2.4 typ. 0.095 typ. 4.4 typ. 0.173 typ. 2.54 typ. 0.1 typ. dimensions 0.41 typ. 1.05 typ. A U V W G M T J F L X P D C K N B H E

Rev.2 Page 8 IDP30E60 IDB30E60 symbol [mm] [inch] min max min max A 9.80 10.00 0.3858 0.3937 B C 1.25 1.75 0.0492 0.0689 D 0.95 1.15 0.0374 0.0453 E F 0.72 0.85 0.0283 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.28 1.40 0.0504 0.0551 L 9.00 9.40 0.3543 0.3701 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 3.30 3.90 0.1299 0.1535 R S 1.70 2.50 0.0669 0.0984 T 0.50 0.65 0.0197 0.0256 U V W X Y Z 9.40 typ. 0.3701 typ. 16.15 typ. 0.6358 typ. 6.43 typ. 0.2532 typ. 4.60 typ. 0.1811 typ. 10.8 typ. 0.4252 typ. 1.35 typ. 0.0532 typ. 14.1 typ. 0.5551 typ. 8° max 8° max dimensions 2.54 typ. 0.1 typ. 5.08 typ. 0.2 typ. 1.3 typ. 0.0512 typ. TO-220-3-45 (P-TO220SMD)

Rev.2 Page 9 IDP30E60 IDB30E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.