D2SB60 PFS | Alldatasheet
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Technical content
Features
- 低的反向漏电流 Low reverse leakage
- 较强的正向浪涌承受能力 High forward surge capability 机械数据 Mechanical Data 封装 塑料封装 Case: Molded Plastic 极性 标记模压或印于本体 Polarity: Symbols molded or marked on body 安装位置 任意 Mounting Position: Any
- 浪涌承受能力：80 A S urge overload rating:80 Amperes peak D2SB60 D2SB60 塑封硅整流桥堆 反向电压 600V 正向电流 2.0 A Single-phase Silicon Bridge Rectifier Reverse Voltage 600 V Forward Current 2.0 A D2SB60 TA= 125 500 Unit mm +~~- 20.7 ± 0.3 2.0 ± 0.3 1.0 ± 0.1 5.0 ± 0.2 2.5 ± 0.2 0.5 ± 0.1 3.5 ± 0.2 10.5 ± 0.3 8max 5.5max 4.5±0.5 5.0±0.5
正向电流 I F (A) 正向特性曲线（典型值） 正向电压 V F (V) 环境温度 Ta( 通过电流的周期 峰值正向浪涌电流 I FSM (A) 平均正向电流 I F(AV) (A) 浪涌特性曲线（最大值） 特性曲线 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE I F Instantaneous Forward Current (A) VF Instantaneous Forward Voltage (V) Tamb, ambient temperature (°C) I F(A) Average Forward Rectified Current (A) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT Number of Cycles at 60 Hz. I FSM Peak Forward Surge Current (A) 正向电流降额曲线 平均整流电流 I [A] FORWARD POWER DISSIPATION AVERAGE RECGIFIED FORWARD CURRENT I o (A) FORWARD POWER DISSIPATION P F (W)) 0.1 Pulse measurement per diode Tl=25℃ 1.0 2.0 0.5 1.5 功率损耗曲线 功率损耗 P(W) 10 10002 5 2 0 5 0 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 120 Sine wave Tj=150℃ I FSM 10mS 10mS
1 Cycle
Tj=25 before 40 80 120 160 +~~- P.C.B. on glass-epoxi substrate soldering land 5mmф sine wave R-load free in air