D2SB05 ZSELEC | Alldatasheet
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! Diffused Junction ! High Current Capability ! High Reliability Mechanical D ata ! T er minals: Plated Leads Solderable per ! Mounting Position: Any ! Marking: Type Number Maximum R a tings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol D2SB D2SB D2SB D2SB D2SB D2SB D2SB
100 Unit
Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RM S Reverse Voltage VR(RM S) 35 70 140 280 420 560 700 V Av erage Rectified Output Current ( N o t e 1 ) @ TA = 50°C IO 2.0 A Non-Repetiti ve Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 80 A Forward Vol tage (per element) @IF = 2. 0A V FM 1.0 V P ea k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @TA = 100°C IRM 500 µA Ty pical Thermal Resistance (Note 3) R /G01JA 30 K Operating and St orage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Leads m ai ntained at ambient temperature at a distance of 9.5mm from the case. 3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad 1 of 2 D2SB05 – D2SB100 ! Lead Fre e: For RoHS / Lead Free Version www.senocn.com Dimensions in inches and (milimeters) 2 S Ch amfer .098( 2.5) *45° (5.3) (4.8) .210 .190 .133(3.4) .142(3.6) .051(1.3) .059(1.6) .091(2.3) .106(2.7) .81(20.6) .77(19.6) .190 (4.8) (5.3) (5.3) (4.8) .210 .190 .045(1.14) .035(0.90) .56(14.2) .50(12.7) .42(10.7) .44(11.2) .043(1.1) .035(0.9) .020(0.55) .015(0.38) Zibo Seno Electronic Engineering Co.,Ltd.
D2SB05 – D2SB100 0.1 1.0 0 0.2 0.4 I , INSTA NTANEOUS FWD CURRENT (A) F V ,INST ANTANEOUS FWD VOLTAGE (V) Fig. 2 T ypical Fwd Characteristics F T = 150°CJ T = 25°CJ P ulse Width = 300 µs 100 1 10 100 I , PE AK FWD SURGE CURRENT (A) FS M NU M BER OF CYCLES AT 60 Hz Fig. 3M ax Non-Repetitive P eak Fwd Surge Curre nt T = 150 Single Half Sine Wave (JEDEC Method) j 100 11 0 100 C , JUNCTION CAPACIT ANCE (pF) j V , REVERSE VOL T AGE (V) Fig. 4 Typical Junction Capacitance R T = 25°C f = 1MHz j 0.01 0.1 1.0 100 1000 10,000 0 20 40 60 80 100 120 140 I , INSTANTANEOUS REVERSE CURRENT (mA) R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 125°Cj T = 100°Cj T = 25°Cj T = 150°Cj T,TE MPERATURE (°C) Fig. 1Forward Current Derating Curve 2 of 2 D2SB05 – D2SB100 www.senocn.com 1.0 2.0 3.0 0 50 100 150 I , AVERAGE RECTIFIED CURRENT (A) O Zibo Seno Electronic Engineering Co.,Ltd.