D2FS4 SHINDENGEN | Alldatasheet
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40V 1.6A Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd OUTLINE DIMENSIONS Unit : mm RATINGS SHINDENGEN Case : 2F APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment Telecommunication Small SMT Tj150 PRRSM avalanche guaranteed
FEATURES
Schottky Rectifiers (SBD) Single Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Conditions RatingsUnit Storage TemperatureTstg -55\`150 Operating Junction TemperatureTj 150 Maximum Reverse VoltageVRM 40 V Repetitive Peak Surge Reverse VoltageVRRSM Pulse width 0.5ms, duty 1/40 45 V Average Rectified Forward CurrentIO 50Hz sine wave, R-load Ta=34@On alumina substrate 1.6 A 50Hz sine wave, R-load Ta=25@On glass-epoxy substrate 1.3 Peak Surge Forward CurrentIFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=12560 A Repetitive Peak Surge Reverse PowerPRRSM Pulse width 10Ês, Tj=25 330 W Electrical Characteristics (If not specified Tl=25) Item Symbol Conditions RatingsUnit Forward Voltage VF IF=1.6A, Pulse measurement Max.0.55V Reverse Current IR VR=VRM , Pulse measurement Max.2.5mA Junction CapacitanceCj f=1MHz, VR=10V Typ.150pF Æjljunction to lead Max.24 Thermal Resistance Æjajunction to ambient@On alumina substrateMax.90/W junction to ambient@On glass-epoxy substrate Max.120
0.1 D2FS4 Tl=150°C [MAX] Tl=25°C [MAX] Pulse measurement per diode Tl=150°C [TYP] Tl=25°C [TYP] Forward Voltage V F [V] Forward Current I F [A]
0.1 1 10 0.05 0.50.2 20 5052 200 500 2000 5000 Reverse Voltage VR [V] Junction Capacitance Cj [pF] f=1MHz Tl=25°C TYP per diode Junction Capacitance
0.01 0.1 100 1000 0 5 10 15 20 25 30 35 40 D2FS4 Tl=150°C [MAX] Tl=150°C [TYP] Pulse measurement per diode Tl=125°C [TYP] Tl=100°C [TYP] Tl=75°C [TYP] Reverse Voltage VR [V] Reverse Current I R [mA]
0.3 Reverse Power Dissipation Tj = 150°C SIN 0.2 0.5 D=0.05 DC 0.1 0.8 tp VR T D=tp/T Reverse Voltage VR [V] Reverse Power Dissipation PR [W]
T D=tp/T 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 0.5 1 1.5 2 2.5 3 D2FS4 0.3 Forward Power Dissipation Tj = 150°C SIN 0.2 0.1 D=0.8 DC 0.5 0.05 Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
T D=tp/T 0.5 1.5 2.5 0 20 40 60 80 100 120 140 160 D2FS4 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Alumina substrate Soldering land 2mm φ Conductor layer 20 µm Substrate thickness 0.64mm Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A]
T D=tp/T 0.5 1.5 2.5 0 20 40 60 80 100 120 140 160 D2FS4 0.3 Derating Curve VR = 20V SIN 0.2 0.1 D=0.8 DC 0.5 0.05 VR Glass-epoxy substrate Soldering land 2mm φ Conductor layer 35 µm Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A]
Peak Surge Forward Capability 100 1 10 100 D2FS4 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=125°C before surge current is applied
0.5IRP VRP IR PRRSM = IRP × VRP 100 120 0 50 100 150 SBD Repetitive Surge Reverse Power Derating Curve Junction Temperature Tj [ °C] PRRSM Derating [%]
0.1 1 10 100 SBD Repetitive Surge Reverse Power Capability Pulse Width tp [µs] PRRSM(tp) / PRRSM(tp=10µs) Ratio tp IRP VR 0.5IRP VRP IR PRRSM = IRP × VRP