D2FK60 SHINDENGEN | Alldatasheet
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Single Diode Super Fast Recovery Diode MSH OUTLINE Weight 0.16g (Typ) —— py-te—9 600V 1.5A [atv mark l i = Dee e/)\\SMD ‘© Small SMD Qa, am * High Voltage \\ © trr=75ns © trr=75ns Beane 792_ \\ aot (A) oie Vec1aV Slow Vet.av Type No Class Date coe > - 16 ~ eA21yFYIBE © Switching Regulator *DC/DCAW—-¥ © DC/DC Converter FY iD ©R,0A Home Appliance, Office Automation : ome © Communication e754 IL © Fly Wheel _ SHER OV TSMC Webt 4 b LEH 4 A FA OT TE, EBM ES. AVRO IRFU CMR FEV For details of the outline dimensions, refer to our web site or the diode technical data book. As for the marking, refer to the specification "Marking, Jerminal Connector Mw RATINGS @XtRATK Absolute Maximum Ratings (Oe TI=25'C) HOA me] Re mF Tee Item Symbol] Conditions Type No. D2FK60 Unit Cet FLIE = c age anpeve ed Le. EAE AEL ; HD ARE 50H z Esk, LEU ar TUS THRE Bee ecciesFonart Curent | TO | Se Loo oad A Pe eet [mB '4=28C On glass-epoxy substrate LAR SME Ti SOHz IESE, JER BLA 7 VA Bi, T]= 25T 40 N Peak Surge Forward Current FSM | _50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25"C. @B RH) - AAV Electrical Characteristics (H#O eV TI=25C) wo 1=V, 20 AWE SSE —— = ~ Hin Cpactoe = 1M, a= 10V 2 A eM) — FM st TSF EWR : cw Junction to ambient Ty PRR MAK 120 AKRBRABIt NRRROLH SMO LICMETSELEMSVET. All specifications are subject to change without notice. 168 (W832) wwwshindengen.co.jp/productisemil
Super FRD (Single) Small SMD D2FK60 M#${2B1 CHARACTERISTIC DIAGRAMS Ame BHR CARY RRR, Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability 0 7 3 » > joke ‘Be 2 a) COLE ele wk Tawa a = a 2 a Sard CORT eZ fap 3! A rmwoRN) ooh YZ i PM z Abe tr-iarccrve) 2 | ALG a (/ i YY 4 i a UY, ~ a Oa 2 or TH z 25 Gr 7 TH Forward Voltage Vr (V) Average Rectified Forward Current Io (A) Number of Cycles (cycle) FF TA-F THe LLL | FFA Talo Fil—F 1 Fh—T Talo Derating Curve To = = ]_[—Liw __| Derating Curve Ta-lo Derating Curve Ta-lo ee ua i. S iq SSE $ L ‘Sa - iN : gt | VeVi a RQ fo=os: vig | VRE View pitt oS me IN | ee ot tN > SSN DE oe 9 EBNF cite EET | |) Sc Es] Je NN fin YY = | IN ue EN Ea lia nN eee ef ea 4 ES 5 \\ = NS 5 iN PANE EE Es ee eee ims wm | a is 7” Lead Temperature ‘Tl (°C) Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) ; gAaE Junction Capacitance a f= 1M SiGeenec = al tt PN TT aS 3 | PW SRRRGE LO a o 0 a) ® Ww 30 Reverse Voltage Vr (V) * Sine wave (4 50Hz Til L TH EF 2 SUHZ sine wave IS used for measurements. OE ROME SMI YF Ho TBD ET, Typical LRM SED ERL TET. % Semiconductor products generally have characteristic variation. ‘Typical is statistical average of the device's abilty www.shindengen.co.jp/product/semi! (832) 169