D25XB20 EIC | Alldatasheet
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D25XB20 ~ D25XB60 SILICON BRIDGE RECTIFIERS PRV : 200 - 600 Volts Io : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL D25XB20 D25XB60 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 600 V Maximum RMS Voltage VRMS 140 420 V Maximum DC Blocking Voltage VDC 200 600 V Maximum Average Forward Current A
50 Hz sine wave, R-load
Peak Forward Surge Current, 50Hz sine wave Non-repetitive 1 cycle peak value, Tj = 25 °C Current Squared Time at t < 8.3 ms. I2t 300 A2S Maximum Forward Voltage per Diode at IF = 12.5 A VF 1.05 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) RθJC 1.0 °C/W Operating Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Note : 1. Thermal resistance from junction to case, With heat sink. Page 1 of 2 Rev. 02 : March 25, 2005 RATING IFSM 350 A 25 (With heatsink, Tc = 98°C) 3.5 (Without heatsink, Ta = 25°C) IF(AV) RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 * Pb / RoHS Free www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( D25XB20 ~ D25XB60 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( ° C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 02 : March 25, 2005 100 10 1.0 400 600 300 200 100 0.1 0.01 0.01 1.0 0.1 1400 20 40 60 12 0PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Tc = 25 °C Pulse Width = 300 µs 1 % Duty Cycle TJ = 50 °C TJ = 100 °C TJ = 25 °C 500 10 20 601 2 4 6 40 10 With heatsink www.eicsemi.com