D25SC6M ISC | Alldatasheet

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Technical content

SchottyBarrierDiode D25SC6M www.iscsemi.com

FEATURES

  • LowVF
  • High RecoverySpeed
  • Full Molded

APPLICATIONS

  • Switching PowerSupply (SPS)
  • Telecommunication
  • DC/DC Converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage 60 V IF(AV) AverageRectifiedForwardCurrent 12.5×2 A IFSM Non-repetitivePeakSurgeCurrent (Surge applied at rated load conditions half-wave,singlephase,50Hz) 300 A TJ Max. JunctionTemperature 175 ℃ Tstg StorageTemperatureRange -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1.5 ℃/W

SchottyBarrierDiode D25SC6M www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25 °Cunlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF MaximumInstantaneousForward VoltageForPerDiode IF=12.5A -- -- 0.58 V IR MaximumInstantaneousReverse CurrentForPerDiode VR=VRWM -- -- 10 mA PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.