2SD2599 TOSHIBA | Alldatasheet

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TOSHIBA 2$D2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit in mm 15.5405 | 03.6103 —peoto3 e High Voltage : VoBo = 1500 V 8 A] J & S e@ Low Saturation Voltage : VCE (sat) = 8 V (Max.) eo] a) | a] fa gol © High Speed : te = 0.5 ps (Typ.) | | ae (a @ ~Bult-in Damper Type ‘o Ta phy © Collector Metal (Fin) is Fully Covered with Mold Resin. 2swaxll j aq somes | s MAXIMUM RATINGS (Ta = 25°C) sas i 5.45 CHARACTERISTIC SYMBOL unir || &5 q si Fi Collector-Base Voltage VcBO 1500 gr 23 4 Collector-Emitter Voltage Vcro | 600 | V_ |is Emitter-Base Voltage = TEBo : 5 Vv OAS ok use CP JEDEC = ae Collector Power Dissipation P, Ww = (Te = 25°C) c TOSHIBA _2-16E3A Tunetion Temperature Weight : 5.5¢ (Typ) Storage Temperature Range =B5~150 EQUIVALENT CIRCUIT COLLECTOR BASE ot 50 0 (Typ.) © EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo__|Vcp = 1500V, In = 0 [ — | — | 1{[ ma] Emitter Cut-off Current Impo _|Vmp=5V, Ic =0 [ 66 | — | 200 | ma | Emitter-Base Breakdown DO Current Gain [bre [Von =5V, Ig = 058 Lst-[=l_ Collector-Emitter Saturation = vor festane=ean [1 «| +] v| Base-Emitter Saturation i tomy fe=tane=ean [= |e] v9] v| Forward Voltage _ Von=10V,ig= oi | — | 3 | — [win | Collector Output Capacitance Vos = 10V, Ip=0,f=1MHz[ — | 55 | — | pF | Switching Iop = 8A, IBi(end)=084, | — | 75] 10]. Time Fall Time fH = 15.75 kHz [=o Tio] “ 1999-09-02 2/4

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