2SD2586 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit in mm 15.5405 | 03.6103 —peoto3 e High Voltage : VoBo = 1500 V 8 A] J & S e@ Low Saturation Voltage : VCE (sat) = 5 V (Max.) oo] 3 | «| fa gol © High Speed : tp = 0.3 ps (Typ.) | | ae (a © ~Bult-in Damper Type to Ta ogy © Collector Metal (Fin) is Fully Covered with Mold Resin. 2swaxll j aq somes | s MAXIMUM RATINGS (Ta = 25°C) sas i 5.45 CHARACTERISTIC SYMBOL unir || &5 q si Fi Collector-Base Voltage VcBO 1500 gr 23 4 Collector-Emitter Voltage Vcro | 600 | V_ |is Emitter-Base Voltage = VeB0 5 Vv OAS ok use CP JEDEC = ae Collector Power Dissipation P, 50 w — (Te = 25°C) c TOSHIBA _2-16E3A Junction Temperature Weight : 5.5 g(Typ.) Storage Temperature Range =55~150 EQUIVALENT CIRCUIT COLLECTOR BASE ot 45 Q.(Typ.)O EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual Property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo__| Vos = 1500, In = 0 [ — | — [| 1i][ ma] Emitter Cut-off Current Impo _|Vep=5V, Ic =0 [ 70 | — | 250 | mA | Emitter-Base Breakdown a woo [eewanics | +[-[-[¥ DC Cuma Gain brE@ [Von = SV. 1e=18 [3 — [3 hrm) |Vor =5V, Io =3.5A | 44 | — | 85 | Collector-Emitter Saturation _ _ vorms ferssnineoon [| -[ «[¥ Base-Emitter Saturation sin festanieceen | [oo [vel | Forward Voltage _ ‘Transition Frequency Von =10V, Ig =01A = 28 | pM | Collector Output Capacitance Vcp = 10V, Ip = 0, f= 1 MHz [ — | 73 | — | pF | Switching Storage Time Top = 3.5A, Ipi(end) =0.8A, | — | 7.5 | 10 | Time Fig.) _[ Fall Time fig = 15.75 Kitz [=Tos Poe] “* Fig.1 SWITCHING TIME TEST CIRCUIT (fy = 15.75 kHz) CURRENT PROBE T.U.T. 2802242 10 4H 100 2<F rs a % T1 é a & a Fey a © 23S 5 1009 89 2 S spn INPUT 3 we | & 4 x 25 ps & . Bean | & mA & Ic 4 I ° 3 | | on 30 4 a 63.5 us 105V Base Current Collector Current 10% Tp1 (end) IcPp 90% 1999-09-02 2/4
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