2SD2553 TOSHIBA | Alldatasheet
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TOSHIBA 2$D2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS a aed sa aae Po) 3 © High Voltage : Vopo = 1700V Thats as ¢@ Low Saturation Voltage : VCR (sat) = 5 V (Max.) 4" a 15 v8, »féooy © = High 2 tp = 0. . 40 ; im ‘igh Speed te = 0.3 ws (Typ.) 2amaxl il dz e =Bult-in Damper Type ses | @ Collector Metal (Fin) is Fully Covered with Mold Resin. 545 5.45 MAXIMUM RATINGS (Ta = 25°C) Bi23 4 CHARACTERISTIC SYMBOL | RATING | UNIT ||” st 1. pase m 2. COLLECTOR Collector-Base Voltage VCBO 1700 3 EMITTER Emitter-Base Voltage VEBO SEDEC = [oe fic Collector Current A | [fosmmpa 2-16m3a [Base Current | || A] Weight: 8 Ciyp) an EQUIVALENT CIRCUIT Tunetion Temperature Storage Temperature Range —55~150 COLLECTOR BASE 50 0 (Typ.)O EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL | — TEST CONDITION [xan. | rye. [max.[unzr] Collector Cut-off Current Toso [Von = 1700V, In =0 L— |— |.1] mA | Emitter Cut-off Gurrent [trzo [Ven = 5V, Ig = 0 [36 _| — | 200 | ma | Emitter-Base Breakdown Voltage| VEBo [Iz = 400mA, Ig = 0 [ 5/—|[—]|v] DC Current Gain Vop=5V.Ig=1A | 8 | — | 28] [ bre (2) [Vor =5V, Ic =6A | 5 | —T| 91 Collector-Emitter Saturation a torn fesenperas |= [=| *[ ¥] Base-Emitter Saturation Voltage | VBE (eat [Ic = 6A, Ip =12A [— [o9}i2]v_| Forward Voltage (Damper Diode) Ip=8A | — | 16] 20] Vv | Transition Frequency Von=10V,Ig¢=01A | — | 2| — |Mmz| : Vcp = 10V, Ip = 0, caer Or Goins [eo (ae = [oe [= | or Switching Time Top =6A, Imieng= 158 =] 9] 2], (Fig.1) | Fall Time fy = 15.75 kHz [ — [03 | 07] “ Fig.1 Switching time test circuit Ic Ip 2802482 10 nH 100 pF = + ||rurl s 3 % ET | #2 Sane | a rf & 36 = 1002 30 el alo [a INPUT els Be] op Ss re g by ae ee 25 ys 7 4S SFsTol Ss TT opie Sha | | a 63.5 us VDD vec ni BASE CURRENT 0 ws \\/ 4 I 90% CP Base Current Gradient omen \\ Ipi + 10% dig/dt = -BL* “B2 (4 71s) 0 KN ‘ste 1999-09-02 2/4
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