2SD2539 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit in mm e High Voltage : VcBo = 1500 V I85205 03.6403 , 130203 © Low Saturation Voltage : VCE (sat) = 5 V (Max.) iS [4%] | “SEV Fla e High Speed : te = 0.3 us (Typ.) Isl alc e = Bult-in Damper Type | | - 3 bb qi © — Collector Metal (Fin) is Fully Covered with Mold Resin. ao URSA 2amax Wy 2] 2 o.9smax\\l | 5 MAXIMUM RATINGS (Ta = 25°C) 5.45 5.45 CHARACTERISTIC SYMBOL | RATING | UNIT 8g g Collector-Base Voltage Veso_| 1500 | Vv |] ‘a123 4 Collector-Emitter Voltage VCEO [600 | Vv | a Emitter-Base Voltage si VERO ; Vv Slo CoLtector Collector Current c | 7 | A 3. EMITTER | Pulse | Icp [| 4 JEDEC _— Siar Collector Power Dissipation P, w EIAI — (Te = 25°C) c TOSHIBA _2-16E3A Junction Temperature Weight : 5.5 g (Typ.) Storage Temperature Range —55~150 EQUIVALENT CIRCUIT COLLECTOR BASE ot 50 Q (Typ.) © EMITTER 9610016 4A @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current IcBo Vos = 1500 V, Ip =0 [— [—][ 1] ma] Emitter Cut-off Current IEBO Ves = 5V, Ig = 0 | 66 | — | 200 | mA | Emitter-Base Breakdown = tao ferwomiens | +[=|-[ =| ; | brea) [Vor =5V, Ig =1A | 8 [ — | 28] DC Current Gain BRE (2) |VcR=5V,IG=5A rsl— |_| Collector-Emitter Saturation _ _ = sone fossureeisn [= [=| [9 Base-Emitter Saturation tris fesenieion [Pw [ Forward Voltage _ Transition Frequency Von = 10V, 1g =01A Df 2 | [Mm | Collector Output Capacitance Vcp = 10V, Ip = 0, f= 1 MHz [ — | 115 | — | pF | Switching | Storage Time Icp = 5A, Ipi(ena)=10A, | — | 6] 9 | . 7 pS Time Fall Time = 15.75 ele [= pos [06 | Fig.1 SWITCHING TIME TEST CIRCUIT Ic 2802482 a 10 pH 100 pF) {1B q ES 1 TUT my 4 a INPUT ° x © a ale IE to0.0 $0 xTs = 25 ys FS] BH] Sle q S gra] S oti a a 63.5 ps VpD x Voc BASE CURRENT 9 ---J\\----_ “ a m 30% (CP | 10% ee 0 ---4----}-- - Base Current Gradient B tstg # 1999-09-02 2/4
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& 2 BE SHE CURVE SHOULD BE APPLIED IN £ NI ee HICH rma unre aca BS CCCCeeeeeeee eo 25g oyL Till [fl cuncue oxnzpenve use 2 CORPS ‘1007 Im 10m Od 1 10 100 So “0 20 40 60 80 100 120 140 160 PULSE WIDTH ty (s) CASE TEMPERATURE Te (°C) SAFE OPERATING AREA Tiga, worsen EE Pp Kn pes. iisao= TT ae Ni 7 (CONTINUOUS) KT XT SOT NTN 2 3 PNET EN TT
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ee 0.5 TAT 2 os} — A Nt 6 eC FAN Neat 2 oo LUMI TUUITININTT ong} SINGLE Nonneperrnve FNC “ PULSE Te = 25°C NNT [TANT 0.03) CURVES MUST BE DERATED \\ LINEARLY WITH INCREASE IN PA TEMPERATURE. [vero 343) ||| ooly 3.5 «10 30 50 100 300500 1000 COLLECTOR-EMITTER VOLTAGE VcgE (°C) 1999-09-02 4/4