2SD2470 JIANGSU
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 1. EMITTER 2. COLLECTOR 3. BASE 2SD2470 TRANSI STOR (NPN)
FEATURES
z Low Saturation Voltage MAXIMUM RATINGS (T a =25 unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 15 V V CEO Collector-Emitter Voltage 10 V V EBO Emitter-Base Voltage 8 V I C Collector Current –Continuous 5 A P C Collector Power Dissipation 400 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =50μA , I E =0 15 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =0 10 V Emitter-base breakdown voltage V (BR)EBO I E =50μA, I C =0 8 V Collector cut-off current I CBO V CB =10V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =8V, I C =0 0.5 μA DC current gain h FE V CE =2V, I C =2A 270 820 Collector-emitter saturation voltage V CE(sat) I C =3A,I B =0.1A 0.5 V Transition frequency f T V CE =6V, I C =50mA,f= 100 MHz 170 MHz Collector output capacitance C ob V CB V,I E =0,f= MHz 30 pF JC(T www.cj-elec.com 1 A,Jun,2014www.cj-elec.com D,Aug,2016 1 32
imensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.420 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 D 3.900 4.100 0.154 0.161 D1 2.280 2.680 0.090 0.106 E 3.050 3.250 0.120 0.128 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 15.100 15.500 0.594 0.610 θ 45° TYP. 45° TYP. www.cj-elec.com 2 D,Aug,2016
www.cj-elec.com 3 D,Aug,2016