2SD2438 SANKEN | Alldatasheet
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Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1587) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings 160 150 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Ratings 100max 100max 150min 5000min* 2.5max 3.0max 80typ 85typ Unit mA mA V V V MHz pF Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA VCE=12V, IE=–1A VCB=10V, f=1MHz Darlington 2SD2438 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta DeratingSafe Operating Area (Single Pulse)fT –IE Characteristics (Typical) 24 6 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 10mA 2.5mA2.0mA1.8mA 1.5mA 1.3mA 1.0mA 0.8mA 0.5mA IB =0.3mA 02 0.5 1 5 8 Collector Current IC (A) DC Current Gain h FE (VCE =4V) 1000 5000 10000 40000 Typ 0.2 0.5 1 10 100 10005 50 500 2000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0 2 2.5 1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) 3.5 00 50 100 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 10ms 10 5053 100 200 0.05 0.1 0.5 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC 100ms 0.2 10.5 10 5 200 10050 Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) IC =4A IC =6A IC =8A (VCE =4V) 0.2 0.5 5 8 1 Collector Current IC (A) DC Current Gain h FE 1000 500 5000 10000 50000 125˚C 25˚C –30˚C –0.02 –0.1 –1 –8 120 100 60Cut-off Frequency fT (MH Z ) (VCE =12V) Emitter Current IE (A) Typ Without Heatsink Natural Cooling n Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 0.6typ tstg (ms) 10.0typ tf (ms) 0.9typ IB1 ( mA) VBB1 (V) External DimensionsFM100(TO3PF) 4.41.5 1.5 BE C 5.45±0.1 ø3.3±0.2 1.6 3.3 1.75 0.8±0.2 2.15 1.05+0.2 -0.1 5.45±0.1 23.0±0.316.2 9.5±0.2 5.5 15.6±0.2 5.5±0.2 3.45 3.350.65+0.2 -0.1 ±0.2 3.0 0.8 a b Weight : Approx 6.5g a. Part No. b. Lot No. B C E (70Ω ) Equivalent circuit *hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)