UPD23C1001E NEC | Alldatasheet
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131,072 x 8-Bit NEC Electronics Inc. Mask-Programmable CMOS ROM Description Pin Configuration The zPD23C1001E Is a 131,072-word by 8-bit static ROM —32-Pin Plastic DIP fabricated with CMOS silicon-gate technology and de- signed to operate from a single +5-volt power supply. neh Py The device has three-state outputs and fully TTL- A q 5 x 5 x, o€,/06 compatible inputs and outputs, and is packaged in a as de 20 Hoes oet/0C 600-mil, 32-pin plastic DIP. avd Aaa ards 2B Features fe: © 131,072-word by 8-bit organization ee oe Bis © Fast access time of 200 ns maximum acs 8 ahoes © TTL-compatible inputs and outputs mao & zhao © Three-state outputs adn 2h © Single +5-volt power supply Aot12 21 Po, © CMOS process technology Oo C13 20105 © Fully static operation ods 1905 © Low power dissipation oat|'s 18% — 220 mW (active) ono che 1703 : — 550 nW (standby) soueoraa Ordering Information Pin Identification Part Number ‘Access Time (max) Package Symbol =~ anton —S=S=~—“—*s*s~s~S~S~S~S BPD23C1001EC 200 ns S2-pin plastic DIP AS Ag adress inputs Qp-O7 Data outputs CE Chip enable OE /OE/0C Output enable 1 (Note 1) OEZ/OE/DC Output enable 2 (Note 1) CEs Output enable 3 GND Ground Veo +5-volt power supply NC No connection Notes: (1) This pin is user-definable as active low, active high, or “don't care" (in the cases of OF y/OE4/0C and OE2/OE2/DC). 004s 11-9
Absolute Maximum Ratings Capacitance Supply voltage, Voc osto+70v TAS 25Cif=1MHe input voltage, Vj 03VtoVoo +osv Parameter _Symbol_Min_Typ__Max__Unit ‘Output voltage, Vo —O3Vt0Veo +03v Mputcapacitance CS ‘Operating temperature, Topa aot +700 © Dutputcapacitance Co 6 pF Storage temperature, Tsra 85 to +150°C Truth Table Exposure to Absolute Maximum Ratings for extended perlods may | = affect device reliability; exceeding the ratingscould cause permanent CE _OEy/OE/DC OE,/OE,/DC OE; Outputs Function damage. The device should be operated within the limits specified Vin x x X High _ Standby under DC and AC Characteristics. a a as a oe oe Recommended Operating Conditions Meo XX High Active Parameter Symbol Min Typ Max unt Me XX High Atv input voltage, high Vin 22 Veo+os vo Me A A Me Pour_—Read Input voltage, low Vie -0.3 08 Vv Notes: ‘Supply voltage Veo 45 5.0 55 v (1) | = Inactive Ambient temperature T~ =10 70 *c «A= Active a (9) X = “dont care” Block Diagram © 0; Op 03 O4 Os Op Or »tH “7 FR CITT rs, ven a s—tgsH sec Varin rae — FA &, sit, CE nput 08H Fi Memory Cel Matix Butter OF An H THorex8 3 Ai2 LH = Ans l| ann cept | ae 15 r| Buffer ce Ais 1 11-10
Ta = 10 to +70°C; Veo = +5.0V 210% Parameter Symbol Min Te Max Unit Test Conditions Output voltage, high Vou 24 Vv lo = 400 HA Output voltage, low Vou 04 v To. = +2.5mA Input leakage current lu -10 10 BA Vi = 0Vt0 Voc Output leakage current ho =10 10 BA Vo = 0V to Veo; outputs disabled Power supply current lect 40 mA CE = Vit (active) loca 15 mA TE = Vix (standby) loca 100 A TE = Voo-02V (standby) AC Characteristics Ta = -10to +70°C; Voc = +5.0V +10% (Note 1) Parameter ‘Symbol Min TP Max Unit Test Conditions ‘Address access time woo. 200 ns Chip enabie access time toe 200 ns Output enable access time toe 400 ns Output hold time ton 0 ns Output disable time toF 0 60 ns ' Notes: (1) Input voltage rise and fall times = 20.ns; Input and output timing teforence levels = 0.8 and 2.0; output load = 1 TTL +100 pF. 14-11
tACc: fe ay 1CE: [Note 1} AAS ELT} Notes: {t] tpgis spected from O€ or CE, whichever becomes inactive ist. esmeaton 11-12