2SD2390 SANKEN | Alldatasheet
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Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings 160 150 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Ratings 100max 100max 150min 5000min* 2.5max 3.0max 55typ 95typ Unit mA mA V V V MHz pF Conditions VCB=160V VEB=5V IC=30mA VCE=4V, IC=7A IC=7A, IB=7mA IC=7A, IB=7mA VCE=12V, IE=–2A VCB=10V, f=1MHz Darlington 2SD2390 (Ta=25°C) (Ta=25°C) IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) θj-a–t Characteristics IC –V BE Temperature Characteristics (Typical)V CE (sat)–IB Characteristics (Typical) Pc –Ta DeratingSafe Operating Area (Single Pulse)fT –IE Characteristics (Typical) 24 6 Collector-Emitter Voltage VCE (V) Collector Current IC (A) 10mA2.5mA 2mA 1.5mA 1.2mA 0.8mA 1mA 0.6mA IB =0.4mA 02 0.5 1 5 10 Collector Current IC (A) DC Current Gain h FE (VCE =4V) 1000 5000 10000 40000 Typ 0.1 0.5 1 10 100 10005 50 500 2000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 0 2 2.5 1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) 100 3.5 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 10ms 10 5053 100 200 0.05 0.1 0.5 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC 100ms Without Heatsink Natural Cooling 0.2 10.5 10 5 200 10050 Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) IC =5A IC =7A IC =10A (VCE =4V) 0.2 0.5 5 10 1 Collector Current IC (A) DC Current Gain h FE 1000 500 5000 10000 50000 70000 125˚C 25˚C –30˚C –0.02 –0.1 –1 –10 100 60Cut-off Frequency fT (MH Z ) (VCE =12V) Emitter Current IE (A) Typ n Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω ) IC (A) VBB2 (V) IB2 (mA) ton (ms) 0.5typ tstg (ms) 10.0typ tf (ms) 1.1typ IB1 (mA) VBB1 (V) External DimensionsMT-100(TO3P) 15.6±0.4 9.6 19.9±0.3 4.0 2.0 5.0±0.2 1.8 ø3.2±0.1 1.05+0.2 -0.1 20.0min 4.0max BE 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65+0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 2.0g a. Part No. b. Lot No. B C E (70Ω ) Equivalent circuit *hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)