D2241

2SD2241_06 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2241 Switching Applications

• High DC current gain: h FE = 2000 (min)
• Low saturation voltage: VCE (sat) = 1.5 V (max)
• Complementary to 2SB1481 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V DC I C ±4 Collector current Pulse I CP ±6 A Base current IB 0.3 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Base Emitter ≈ 4.5 kΩ ≈ 300 Ω Collector

Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = 100 V, IE = 0 ― ― 20 μA Emitter cut-off current IEBO V EB = 5 V, IC = 0 ― ― 2.5 mA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 100 ― ― V hFE (1) V CE = 2 V, IC = 1.5 A 2000 ― ― DC current gain hFE (2) V CE = 2 V, IC = 3 A 1000 ― ― Collector-emitter saturation voltage V CE (sat) I C = 3 A, IB = 6 mA ― ― 1.5 V Base-emitter saturation voltage V BE (sat) I C = 3 A, IB = 6 mA ― ― 2.0 V Emitter-collector forward voltage VECF I E = 1 A, IB = 0 ― ― 2.0 V Turn-on time ton ― 0.2 ― Storage time tstg ― 1.5 ― Switching time Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% ― 0.6 ― μs Marking IB1 20 μs VCC ≈ 30 V Output 10 Ω IB2 IB1Input IB2 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. D2241 Part No. (or abbreviation code)

Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) 300 0.1 Common emitter VCE = 2 V 500 1000 5000 10000 3000 0.3 0.5 1 3 5 10 −55 Tc = 100°C Common emitter IC/IB = 500 0.3 0.1 0.5 0.3 0.5 1 3 5 Tc = −55°C 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.03 0.3 0.05 0.1 0.3 0.5 1 3 10 30 100 IC max (pulsed)* 10 ms* 1 ms* 100 μs* VCEO max IC max (continuous) 100 ms* IB = 200 μA Common emitter Tc = 25°C 300 250 1 1 2 3 4 5 6 350 400 450 500 Common emitter VCE = 2 V 25 −55 Tc = 100°C 0.1 Common emitter IC/IB = 500 0.5 0.3 0.5 1 3 5 Tc = −55°C 100

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.