2SD2141 SANKEN | Alldatasheet
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IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) θj-a–t Characteristics V CE (sat)–IB Characteristics (Typical) Pc –Ta Derating 24 6 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Safe Operating Area (Single Pulse) 150mA IB =1mA 2mA 4mA 18mA20mA 120mA 90mA 60mA 0.2 10.5 10 5 200 10050 Base Current IB (mA) Collector Current IC (A) IC =7A 0.02 0.1 1 0.5 10 5 5000 10000 1000 500 100 Collector Current IC (A) DC Current Gain h FE (VCE =2V) Typ 0.1 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) 1ms10ms100ms 501051 100 500 0.01 0.05 0.1 0.5 Collector-Emitter Voltage VCE (V) Collector Current IC (A) DC Without Heatsink Natural Cooling 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 50x50x2 100x100x2 150x150x2 IC –V BE Temperature Characteristics (Typical) 0 2.0 2.4 1.0 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =4V) 125˚C (Case Temp)25˚C (Case Temp)–30˚C (Case Temp) h FE –IC Temperature Characteristics (Typical) 0.02 0.1 1.0 5 0.5 10 5000 10000 1000 500 100 Collector Current IC (A) DC Current Gain h FE (VCE =2V) 125˚C –55˚C 25˚C fT –IE Characteristics (Typical) (VCE =12V) Emitter Current IE (A) 0.050.01 01 0.5 1 5 40Cut-off Frequency fT (MH Z ) Typ Natural Cooling Silicone Grease Heatsink: Aluminum in mm Silicon NPN Triple Diffused Planar Transistor Application : Ignitor, Driver for Solenoid and Motor, and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings 380±50 380±50 Pulse10) 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Ratings 10max 20max 330to430 1500 min 1.5max 20typ 95typ Unit mA mA V V MHz pF Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB External DimensionsFM20(TO220F) ø3.3±0.2 10.1±0.2 4.0±0.2 16.9±0.313.0min 8.4±0.2 0.8±0.2 3.9 ±0.2 2.542.54 1.35±0.15 0.85+0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.20.45+0.2 -0.1 BE C a b Weight : Approx 2.0g a. Part No. b. Lot No. Built-in Avalanche Diode for Surge Absorbing Darlington B C E(1.5kΩ )(100Ω ) Equivalent circuit