D2131

2SD2131_06 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Transistor Silicon NPN T riple Diffused Type (Darlington) 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications

• High DC current gain: h FE = 2000 (min) (VCE = 3 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Zener diode included between collector and base.
• Unclamped inductive load energy: E = 150 mJ (min) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 ± 10 V Collector-emitter voltage VCEO 60 ± 10 V Emitter-base voltage VEBO 7 V DC I C 5 Collector current Pulse I CP 8 A Base current IB 0.5 A Ta = 25°C 2.0 Collector power dissipation Tc = 25°C PC W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Unit: mm JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Base Emitter ≈ 5 kΩ ≈ 150 Ω Collector

Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = 45 V, IE = 0 ― ― 10 μA Collector cut-off current ICEO V CE = 45 V, IB = 0 ― ― 10 μA Emitter cut-off current IEBO V EB = 6 V, IC = 0 ― ― 2.5 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 50 60 70 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 60 70 V hFE (1) VCE = 3 V, IC = 3 A 2000 ― 15000 DC current gain hFE (2) V CE = 3 V, IC = 5 A 1000 ― ― VCE (sat) (1) IC = 3 A, IB = 6 mA ― 1.1 1.5 Collector-emitter saturation voltage VCE (sat) (2) IC = 5 A, IB = 20 mA ― 1.3 2.5 V Base-emitter saturation voltage V BE (sat) I C = 3 A, IB = 6 mA ― 1.7 2.5 V Unclamped inductive load energy E S/B (Note 1) 150 ― ― mJ Turn-on time ton ― 1.0 ― Storage time tstg ― 4.0 ― Switching time Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% ― 2.5 ― μs Note 1: Measurement circuit for unclamped inductive load energy Note 2: (1) Pulse width adjusted for desired I CP (ICP = 5.47 A min) (2) E = 1/2 L ICP Marking IB1 20 μs Input IB2 VCC = 30 V IB1 IB2 Output 10 Ω T.U.T IB1 IB2 VCC L = 10 mH IB1 = 0.1 A ICP IC VCE IB2 = −0.1 A PW Clamp (C-B Zener) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. D2131 Part No. (or abbreviation code)

Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Base-emitter voltage V BE (V) IC – VBE Collector current I C (A) hFE – IC DC current gain h FE Collector current I C (A) Base current I B ( m A ) VCE – IB Collector-emitter voltage V CE (V) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Collector current I C (A) VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) 2 4 6 8

5 Common

Tc = 25°C IB = 0.3 mA 0.7 0.5 1.5 0.8 1.6 2.4 3.2 Common emitter VCE = 3 V 4.0 Tc = 100°C −55 30000 0.05 Common emitter VCE = 3 V 200 1000 5000 10000 0.1 0.3 3 5 Tc = 100°C −55 20 0.5 1 10 500 3000 0.1 Tc = −55°C 100 Common emitter IC/IB = 250 0.3 0.3 0.5 1 3 5 0.5 0.1 Tc = −55°C 100 Common emitter IC/IB = 250 0.3 0.3 0.5 1 3 5 0.5 0.1 2.4 Common emitter Tc = 25°C 0.3 0.5 1 3 10 100 300 0.4 0.8 1.2 1.6 2.0 5 30 50 IC = 8 A 0.1

Collector-emitter voltage V CE (V) Safe Operating Area Collector current I C (A) Ambient temperature Ta (°C) PC – Ta Collector power dissipation P C (W) (1) Tc = Ta Infinite heat sink (2) No heat sink 25 50 75 100 125 175 150 (1) (2) 5 10 30 0.1 0.3 IC max (pulsed)* VCEO max 10 ms* 3 100 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. DC operation Tc = 25°C IC max (continuous) 0.5 1 ms* Pulse width t w ( s ) Rth – tw Transient thermal resistance R th (°C/W) 0.001 1000 100 0.01 0.1 0.3 100 10 1 0.1 (1) No heat sink Ta = 25°C (2) Infinite heat sink Tc = 25°C (2) (1)

RESTRICTIONS ON PRODUCT USE 20070701-EN

• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
• The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
• Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.