D20XB20 EIC | Alldatasheet
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D20XB20 - D20XB60 SILICON BRIDGE RECTIFIERS PRV : 200 - 600 Volts Io : 20 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 V AC @1 Sec * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing mol ded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25°C ambient temperature unless otherwise specified. SYMBOL D20XB20 D20XB60 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 600 V Maximum RMS Voltage VRMS 140 420 V Maximum DC Blocking Voltage VDC 200 600 V Maximum Average Forward Current 20 (With heatsink, Tc = 87°C) (50Hz Sine wave, R-load) 3.5 (Without heatsink, Ta = 25°C) Maximum Peak Forward Surge Current, Tj = 25°C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C I2t 200 A2S Maximum Forward Voltage per Diode at IF = 10 A VF 1.1 V Maximum DC Reverse Current, VR=VRRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case RθJC 1.5 (With heatsink) °C/W Maximum Thermal Resistance, Junction to Ambient RθJA 22 (Without heatsink) °C/W Operating Junction Temperature TJ 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 2 Rev. 03 : August 20, 2012 IR 10 μA RATING IFSM 240 A IO A RBV25 Dimensions in millimeters 4.9 ± 0.2 3.9 ± 0.2 Φ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ±0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( D20XB20 - D20XB60 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - POWER DISSIPATION PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : August 20, 2012 100 70 200 300 150 100 0.1 0.01 1.0 20 280 4 81 2 2 4 AVERAGE RECTIFIED CURRENT, AMPS PEAK FORWARD SURGE CURRENT, AMPS AVERAGE FORWARD OUTPUT CURRENT, AMPSFORWARD CURRENT, AMPS POWER DISSIPATION , WATTSTc = 25 °C Non-repetitive TJ = 25°C20 250 10 20 601 2 4 6 40 100 Sine wave, R-load on heatsink Sine wave TJ = 150 °C www.eicsemi.com