D20N06E

D20N06E CHONGQING | Alldatasheet

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20 Amps,55 Volts N-CHANNEL Power MOSFET

 20A,55V,RDS(ON)MAX=15mΩVGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability APPLICATION  High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA  Networking DC-DC Power System  LCD/LED back light DFN5*6 GENERAL DESCRIPTION The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol D20N06E UNIT Drain-Source Voltage VDSS 55 V Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 20 A Pulsed Drain Current(Note1) IDM 80 Single Pulse Avalanche Energy (Note 2) EAS 20 mJ Avalanche Current IAS 20 A Reverse Diode dV/dt (Note 3) dv/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Channel Temperature TCH 150 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260 ℃ Thermal Characteristics Parameter Symbol MAX Units Thermal resistance , Channel to Case Rth(ch-c) 2.7 ℃/W Thermal resistance , Channel to Ambient Rth(ch-a) 55 ℃/W Maximum Power Dissipation TC=25℃ PD 38 W

Electrical Characteristics(Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 55 － － V Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃， ID=250uA － 0.036 － V/℃ Zero Gate Voltage Drain Current IDSS VDS=55VGS=0V － － 1 μA IDSS VDS=55VGS=0V（TJ =55℃） － － 5 μA Gate-Body Leakage Current,Forward IGSS VGS=±20VDS=0V － － ±100 nA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=10V,ID=250uA 1 － 3 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=5A － 11.5 15 mΩ VGS=4.5V,ID=5A － 12.7 17 Dynamic Characteristics Input Capacitance Ciss VDS=30V,VGS=0V, f=1.0MHZ － 1340 － pF Output Capacitance Coss － 123 － pF Reverse Transfer Capacitance Crss － 10 － pF Switching Characteristics Turn-On Delay Time td(on) VDD=30V,RG=3Ω， RL=1.5Ω VGS=10V (Note4,5) － 6 － ns Turn-On Rise Time tr － 2.5 － ns Turn-Off Delay Time td(off) － 22 － ns Turn-Off Fall Time tf － 2.5 － ns Total Gate Charge Qg VDS=30V,ID=20A, VGS=10V, (Note4,5) － 21 － nC Gate-Source Charge Qgs － 4.7 － nC Gate-Drain Charge Qgd － 2.6 － nC Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS VG = VD= 0V, Force Current － － 20 A Pulsed Diode Forward Current ISM － － 80 A Diode Forward Voltage VSD IS=1A,VGS=0V － － 1 V Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=25V,L=0.1mH,Rg=25Ω,IAS=20A , starling TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%. 4. Repetitive rating; pulse width limited by maximum junction temperature.

RATINGAND CHARACTERISTIC CURVES

RATINGAND CHARACTERISTIC CURVES 0.2 0.1 VDS,Source-Drain Voltage(V) ISD , Reverse Drain Current(A) 100 TJ =150℃ TJ =25℃ VGS =0V Crss Coss Ciss F= 1MHz 5 1510 25 3020 Qg ,Total Gate Charge(nC) VGS,Gate-to-Source Voltage(V) 10000 Capacitance(pF) VDS,Drain-to-Source Voltage(V) 1000 100 VDS=30V ID =20A ID,Drain-to-Source Current(A) VDS,Drain-to-Source Voltage(V) 4 52 31 -60 -40 500 125 15075 TJ , Junction Temperature(℃) VDS , Drain-to-Source Brakdown Voltage(V) 100 -20 25 100 175 VGS=10V 17510025-25 RDS(on),Drain-to-Source On Resistance (Normalized) TJ , Junction Temperature(℃) 2.5 75 1501250 50-50 1.5 0.5 -75 10 20 30 40 50 60 VGS=3V 3.5V 4.5V6V 10V

V D S=10V ID =250uA Pulse Test 0.1 1 10010 -80 8040 TC , C ase Tem perature(℃) VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) TC H , C hannel Tem perature(Initial) (℃) 125 15075 10050 0.0001 Pulse Tim e(s) Nomalized Effective Transient Thermal Impedance -40 0 120 C om m on Source Tc=25℃ Pulse Test 0.01 0.1 0.001 0.01 1010.1 D uty C ycle = 0.5 0.02 0.05 0.1 0.2 Single Pulse 140 D C 10m s 1m s TC =25℃ TJ=150℃ Single Pulse B V D SS Lim ited Lim ited by R D S(on) ID M =Lim ited O peration in this A rea Lim ited by R D S(on) 0.1 0.01 0.1 1 10010 100 V D S,D rain-to-Source V oltage(V ) ID, Drain Current(A) ID , D rain C urrent(A ) RDS(ON) , Rrain-Source On-Resistance (mΩ) V G S =4.5V V G S =10V