D209L WINSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 700 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage I C = 0 9.0 V IC Collector Current 12 A ICP Collector pulse Current 25 A IB Base Current 6.0 A IBM Base Peak Current tP = 5ms 12 A PC Total Dissipation at Tc = 25℃ 130 W Total Dissipation at Ta= 25℃ 2.3 TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Thermal Characteristics Symbol Parameter Value Units RθJc Thermal Resistance Junction to Case 0.96 /W ℃ RθJA Thermal Resistance Junction to Ambient 40 /W ℃ TO-3P

Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max VCEO(sus) Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Sa turation Voltage Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A Ic=12A,Ib=3.0A - - 0.5 1.0 1.5 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 2.0 V VBE(sat) Base-Emitter Satu ration Voltage I Ic=5.0A,Ib=1.0A Ic=8.0A,Ib=1.6A - - 1.2 1.6 V Ic=8.0A,Ib=1.6A Tc=100℃ - - 1.5 V ICBO Collector-Base Cutoff Current (Vbe=-1.5V) Vcb=700V Vcb=700V, Tc=100℃ - - 1.0 5.0 mA hFE DC Current Gain Vce=5V,Ic=5.0A Vce=5V, Ic=8.0A ts tf Resistive Load Storage Time Fall Time V CC=125V , Ic=6.0A IB1=1.6A , I B2=-1.6A Tp=25㎲ 1.5 0.16 3.0 0.4 ts tf Inductive Load Storage Time Fall Time V CC=15V ,Ic=5A IB1=1.6A , Vbe(off)=5V L=0.35mH,Vclamp=300V 0.6 0.04 2.0 0.1 ts tf Inductive Load Storage Time Fall Time V CC=15V ,Ic=1A IB1=0.4A , Vbe(off)=5V L=0.2mH,Vclamp=300V Tc=100℃ 0.8 0.05 2.5 0.15 Note: Pulse Test : Pulse width 300, Duty cycle 2%

Fig. 1 DC Current Gain Fig. 2 Collector-Emitter Saturation Voltage Fig. 3 Base--Emitter Saturation Voltage Fig. 4 Safe Operation Area Fig.5 Power Derating Fig.6 Reverse Biased Safe Operation Area

Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit

TO-3P(B) Package Dimension U n i t : m m