2SD2092 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS LAMP, SOLENOID DRIVE APPLICATIONS Unit in mm ase ¢ High DC Current Gain : hy (1)=500~1500 Ea 5 2) om e@ Low Collector Saturation Voltage 4] PT = Fi : VOR (sat) =0.3V (Max.) Fe LL | ~ MAXIMUM RATINGS (Ta = 25°C) oT | CHARACTERISTIC SYMBOL | RATING | UNIT od 3 | Collector-Base Voltage VCBO asetoa yy yeatoze u Collector-Emitter Voltage VCEO ——— Emitter-Base Voltage VEBO 2 —s|_ co eC | é e Collector Current Aye . 1. BASE [20 z Seuecron Collector Power Ta=25°C Po 2.0 w 2 colLecr Dissipation Te=25°C Junction Temperature JEDEC = Storage Temperature Range —55~150 EIAT SC-67 EQUIVALENT CIRCUIT TOSHIBA 2-10R1A Weight : 1.7g (Typ.) COLLECTOR BASE EMITTER 2610016002 @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility ‘of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing. your designs, please ensure that TOSHIBA. products are, used within specified Operating rarer as fot forth in the toe raceme products specticntione. alse, Pleads Leap in mind the praceuticns snd’ condivons see torte in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No. responsibility js, assumed by, TOSHIBA CORPORATION for ary Intsingersents of misllgctual property or ether rignts Ef tne ira parties Which tay resui from Is use. WO lconse is Gramted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1997-02-03 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current IcBo VcBp=100V, In=0 | — [| — | 10] pA | Emitter Cut-off Current Ippo _|VEB=7V, Ic=0 [| — | — | 10[ ZA | Collector-Emitter Breakdown See PS vgnesoftemomn eo fm | — | — |v | DE Corrent Gain VoR=IV, Io=1A [50 | =| = | Collector-Emitter Saturation as vont [orien | ~ | | 9) | Base-Emitter Saturation ton fess | = [= [ol | Collector-Emitter Forward _ _ wr fw=twnes [= [=| mf Von=5V, Io=05K [=a ae | Collector Output Capacitance Vcop=10V, In=0, f=1MHz [| — | 30 | — | pF | . OUTPUT Turn-on Time | ton 20ns IN=. 7 Ka PUT ‘BL a Switching . Ip1 IBe & Time Storage Time tstg Ino ‘B2 5 us . = = Voc Fall Time tf Ipi=—Ipo=l0mA, _ gy 0.7 DUTY CYCLE=1% 1997-02-03 2/4
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dHlioiv siti titi 2 oa LH AN BASE-EMITTER VOLTAGE Vpg (V) g Pri AA _ a LLIN ELEN | aa EI Py CURVES SHOULD BE APPLIED IN SINGLE NONREPETITIVE WW Z ‘THERMAL LIMITED AREA. os! PULSE Te=26°C coon é (SINGLE NONREPETITIVE PULSE) WO) CURVES MUST BE DERATED [{ | [[[ | 2 © INFINITE HEAT SINK unearLy with increase [| |[[[ | ca ® NO HEAT SINK IN TEMPERATURE. Vogo MAX. | | 22 10 = oe oer 5 10 30° 50100200 3 Sd Be FSH art Hit COLLECTOR-EMITTER VOLTAGE Vop (WV) 23 vo Uy om a Be ee 0 pe ee EE é Saat ae maT | oa LOTT TIE TTT TTT bor oor 04 1 ~~ 10 100 1000, PULSE WIDTH ty (s) 1997-02-03 4/4