D1NK60

STN1HNK60 STMICROELECTRONICS | Alldatasheet

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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 3: Absolute Maximum ratings (/circle6 ) Pulse width limited by safe operating area (1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX. Table 4: Thermal Data (#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec Table 5: Avalanche Characteristics ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Value Unit DPAK / IPAK TO-92 SOT-223 VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 600 V VGS Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 1.0 0.4 0.4 A ID Drain Current (continuous) at TC = 100°C 0.63 0.25 0.25 A IDM (/circle6 ) Drain Current (pulsed) 4 1.6 1.6 A PTOT Total Dissipation at TC = 25°C 30 3 3.3 W Derating Factor 0.24 0.025 0.025 W/ °C dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns Tj Tstg Operating Junction Temperature Storage Temperature -55 to 150 °C DPAK/IPAK TO-92 SOT-223 Unit Rthj-case Thermal Resistance Junction-case Max 4.16 -- -- °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 120 37.87 (#) °C/W Rthj-lead Thermal Resistance Junction-lead Max -- 40 -- °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 260 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 25 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250 µA 2.25 3 3.7 V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.5 A 8 8.5 Ω

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Table 8: Source Drain Diode (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 0.5 A 1 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 156 23.5 3.8 pF pF pF t d(on) tr td(off) tr Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 300 V, ID = 0.5 A, R G = 4.7 Ω, VGS = 10 V (Resistive Load see, Figure 21) 6.5 ns ns ns ns Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480V, ID = 1 A, VGS = 10V, RG = 4.7 Ω (see, Figure 23) 1.1 3.7 10 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) A A VSD (1) Forward On Voltage ISD = 1.0 A, VGS = 0 1.6 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 25°C (see test circuit, Figure 22) 140 240 3.3 ns µC A trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1.0 A, di/dt = 100 A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 22) 229 377 3.3 ns µC A

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. mm. inch A 4.32 4.95 0.170 0.194 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.094 0.105 e1 1.14 1.40 0.044 0.055 L 12.70 15.49 0.50 0.610 R 2.16 2.41 0.085 0.094 S1 0.92 1.52 0.036 0.060 W 0.41 0.56 0.016 0.022 V5 ° 5° TO-92 MECHANICAL DATA

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. mm. inch A1 4.45 4.95 0.170 0.194 T 3.30 3.94 0.130 0.155 T1 1.6 0.06 T2 2.3 0.09 d 0.41 0.56 0.016 0.022 delta H -2 2 -0.08 0.08 W 17.5 18 19 0.69 0.71 0.74 W2 0.5 0.02 H 18.5 20.5 0.72 0.80 H1 25 0.98 t0 . 9 0 . 0 3 5 L1 1 0 . 4 3 l1 3 0.11 delta P -1 1 -0.04 0.04 TO-92 AMMOPACK

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. mm inch A 1.80 0.071 e 2.30 0.090 e1 4.60 0.181 V1 0 o 10o A1 0.02 P008B SOT-223 MECHANICAL DATA

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 TAPE AND REEL SHIPMENT (suffix ”T4”)* TUBE SHIPMENT (no suffix)* DPAK FOOTPRINT * on sales type DIM. mm inch MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY 2500 2500 REEL MECHANICAL DATA DIM. mm inch MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 TAPE MECHANICAL DATA All dimensions are in millimetersAll dimensions are in millimeters

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Table 9: Revision History Date Revision Description of Changes 22-Nov-2004 2 Added SOT-223 Package and new stylesheet

STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America