D1NC60

STD1NC60 STMICROELECTRONICS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 9

Technical content

N-CHANNEL 600V - 7Ω - 1.4A - DPAK/IPAK PowerMesh™II MOSFET ■ TYPICAL R DS (on) = 7 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH ™ II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE V DSS R DS(on) ID STD1NC60 600 V < 8 Ω 1.4 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS = 20 kΩ ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 1.4 A ID Drain Current (continuos) at TC = 100°C 0.9 A IDM (1) Drain Current (pulsed) 5.6 A PTOT Total Dissipation at TC = 25°C 35 W Derating Factor 0.28 W/°C dv/dt Peak Diode Recovery voltage slope 3.5 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (1)ISD ≤1.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS , Tj ≤ TJMAX IPAK DPAK TO-251 TO-252 INTERNAL SCHEMATIC DIAGRAM

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 3.6 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Rthj-sink Thermal Resistance case-sink Typ 1.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR , VDD = 50 V) 70 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µ A VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS , ID = 250µA 234V R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 0.7 A 78 Ω ID(on) On State Drain Current V DS > ID(on) x RDS(on)max, VGS =1 0 V 1.4 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance V DS > ID(on) x RDS(on)max, ID = 0.7A 1.25 S C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 160 pF C oss Output Capacitance 26 pF C rss Reverse Transfer Capacitance 3.8 pF

ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time V DD = 300V, ID = 0.7 A R G = 4.7Ω VGS = 10V (see test circuit, Figure 3) 8n s tr Rise Time 8 ns Q g Total Gate Charge VDD = 480V, ID = 1.4 A, VGS = 10V 8.5 11.5 nC Q gs Gate-Source Charge 2.8 nC Q gd Gate-Drain Charge 2.8 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID = 1.4 A, R G =4 . 7Ω, VGS = 10V (see test circuit, Figure 5) 25 ns tf Fall Time 9 ns tc Cross-over Time 34 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 1.4 A ISDM (2) Source-drain Current (pulsed) 5.6 A VSD (1) Forward On Voltage ISD = 1.4 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 1.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 500 ns Q rr Reverse Recovery Charge 950 nC IRRM Reverse Recovery Current 3.8 A Thermal ImpedanceSafe Operating Area

Gate Charge vs Gate-source Voltage Capacitance Variations Static Drain-source On Resistance Output Characteristics Transfer Characteristics

Source-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.

Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 4: Gate Charge test Circuit Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load

DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 A C H D LL2 1 3 = = B E G = = = = TO-251 (IPAK) MECHANICAL DATA 0068771-E

DIM. mm inch A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0 o 8o 0o 0o P032P_B TO-252 (DPAK) MECHANICAL DATA

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com