D1FH3_10 SHINDENGEN | Alldatasheet
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Single Diode Schottky Barrier Diode M+ OUTLINE | Weight 0.058¢(Typ) 30V 3A ‘Cathode mark ‘ , MEME Ve=0.36V —_ Super-Low Vr=0.36V a erenin, °/\\y FUMBLE © Reverse connect protection for j 5 + DC power source ¢DC/DCAY/\\—4 © DO/DC Converter T e{$89iR (YI — © Mobile phone, PC | WIEN TIL MMIC WebH 4 b Lit CRMRBG HH) OSM F Su >, HMPA IS OUT SRL Coe FS >. For details of the outline dimensions, refer to our web site or ‘Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking, Terminal Connection”. Mex RATINGS @%8xtR ALK Absolute Maximum Ratings (Hoe vUA Te=25C) bs | wee th & MAA item symbol] conditions Type No. DIFHS Unit RAF IE Se 7 bills . ¢ a ts I 50H IESE, HFA, Te = 95°C A Average Rectfied Forward Curent lo 50Hz sine wave, Resistance load, Te=95°C f PART — YE I 5OH2 IERIE, JER LI 7 VA A SIH, T]= 25 A Peak Surge Forward Current HSM _| _50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25°C f @BAH -AHSH Flectrical Characteristics (iii OV Te =25'C) Katey ~ Tr= LOA, Pulse measurement MAX 0,30 ‘ PTB — 2 | tic | iceroass | aK | Bai 5 Rrh- 9 — FM x 7 Crib MAN, yb ARIE 26 (ssn) www.shindengen.co.jp/product/semil
Mist CHARACTERISTIC DIAGRAMS MBE MRDRAAR CARY TRC Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability * oe BUTT tee ine wave Ee eee el |e AH |e SE ane eA |e Se |_|
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Forward Voltage Vr (V) Average Rectified Forward Current lo (A) Number of Cycles (cycle) ARNE PRARARR #2eSR Reverse Current Reverse Power Dissipation Junction Capacitance messes) | eter) | mm) mI ap EEE ed Ey Sib elapse EELS ETE ed - camino || Amen) | a a See |p anya yew IN i) i a aaa ENGinnminineiiniiny gas Be eahi LI Zee red |e BEES es |e g Pree) | 2 ES ato
3 UT) |S ae) | 8 A
% pected) | 8 ES aed 13 | I Ti TT ESE E fg) SE Zeta) be UENO (leer TH LT a CS eat, | ofl | ae Reverse Voltage Vx (V) Reverse Voltage Ve (V] Reverse Voltage Ve (V) FIL-F4YIN—-TJ Teo Fal—-F4YIN-F Ti-lo aE Derating Curve Tc-lo pe Derating Curve T/-lo pL ‘Transient Thermal Impedance B ao S oo 2 HR: = RR TT | 2 eT HT yall Ie] jp DEES REE REREESEG SEU EREH )() 90) ORCSGERSBEREEREERER pea e=t 10-11 B (Ml) 7% aul LUE ae eee eee eee eee ee TS A
2 HEE] [= lta] |e RTA Pita
é BHMERGHRA EE 3 CHET ANd COU A TT TO SHEER RARE 7 LEENA = ANT (/00nS Senn See SEO S wes Se [epee Senne eeeeeee Wh oe eel eeee 4] nee ESSE BEEEEBEER ANIA BEEEG| z ise PEEERESEEEERLGNG NNMAOEET i [AH @ eA (OAT |e DTA ECCT ISTNAI | PCO ZU | Gop) bos bad unaeGuaoeen es: GEGE(N)|/oo0)\\ssoe una ooeaceeyes,\\ ua teae) 000-999) M01 011/00 00 0 000 0 a 2 wo HD Ww 1 WO 0 a 2 © ww wi) 107 107 0 a a iF 10 Case Temperature Te (°C) Lead Temperature TY CC) Time t (s) %* Sine wave ( 50H2 CME LTV EF TT SOKL'SINS wove fs used for measurements + TARR OMS MAIR SF 7 eH OTRO ET, Typical (2B SKN RL EF + Semiconductor products generally have characteristic variation, ‘Typical is a statistical average of the device's ability. www.shindengen.co.jp/productisemi/ (ssa) 27