2SD1950 NEC | Alldatasheet
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NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving or muting. — FEATURES PACKAGE DIMENSIONS © High DC Current Gain and good hee linearity. in millimeters hee = 800 to 3 200 (@Vce = 5.0 V, Ic = 1.0 A) @ Low Collector Saturation Voltage. r ) | aszoa Voce (sat) = 0.18 V TYP. (@lc = 1.0 A, Ip = 10 mA) | © High Vego : Veso = 15V 1,640.2 1540.1 — ABSOLUTE MAXIMUM RATINGS AUREL | Maximum Voltages and Currents (Ta = 25 °c) #4 Collector to Base Voltage Vcso 30 Vv z a es Collector to Emitter Voltage Vceo 25 Vv Simi a eoeze 00s Emitter to Base Voltage Veso 15 v ° hina th | Collector Current (DC) Ic 2 A r ) 0-412 008 Collector Current (Pulse) * Io 3 A Maximum Power Dissipation Total Power Dissipation . a Gollecvor at 25°C Ambient Temperature** = Pr 2.0 w 3, Base Maximum Temperatures Junction Temperature Tj 150 °c L_ ___] . Storage Temperature Range Tota —55 to +150 °c * PW < 10 ms, Duty Cycle = 50°% , r ) ; When mounted on ceramic substrate of 16 cm? x 0.7 mm ELECTRICAL CHARACTERISTICS (T, = 25 °C) CHARACTERISTIC unit | TEST CONDICTIONS Collector Cutoff Current Icgo [100 | na Vee = 30V, le =0 Emitter Cutoff Current 1E80_ [| na | Vep-10V,1c=0 DC Current Gain [nrert | 800 | 1500 | 3200 || Vce=5.0V, I¢=1.0A Collector Saturation Voltage | Vcetsat)*** | [ors | 03 v. Ig =1.0-Arlg = 10 mA Base Saturation Voltage [vecta'*|. «| -083 12 Base to Emitter Voltage [veet** | 600 | 660 | 700 Ve = 5.0 V, Ic = 300 mA Gain Bandwidth Product ft [150 |. 350 [ MHz | | Vce = 10V, Ie = 500 mA _ Output Capacitance [co | *i| 2 | | F| Vc =10V, Ie =0, f= 1.0 MHz #**Pulsed: PW < 360 us, Duty Cycle < 2% 7 t ) hee Classification : . Document No. TC—18944 (O.D.No. TC—6129A) mane 1994 M © NEC Corporation 1987 Ce
TYPICAL CHARACTERISTICS (T, = 25 °C) TOTAL POWER DISSIPATION vs, SAFE OPERATING AREAS (TRANSIENT t ) AMBIENT TEMPERATURE THERMAL RESISTANCE METHOD) 24 _—— ease easy Free Air Fa Fe
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3° oor 3 oof ETT Th t | te | TS a | L 1 a 04 or 2D 01 ee < ~ ee Ee |) PRES FE 0.08 Fo Ta-Ambet Temperate Fo e ool] LI TTA 1 2 5 10 20 50 100 VcE-Collector to Emitter Voltage-V COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 20 COLLECTOR TO EMITTER VOLTAGE 500 2 WP Verte ETT [rm] [ee rT 4 ; — Wie <1ae= ot | YP 400 = cy! 4 1 # Le rt | | BY 727.68 a O28 fu yy <¢ 5 1.0 mA pet Oe 8 t so WAT SAT T gel FT TT = vol WD tol LT | TT ol 22a $A [| bol PZ. emt TT TT | 2 1 i p= 50 #A pe = Sos A ‘cof oa tee os Poo rity TT TT of ttt TTT @ ° 2 4 6 8 10 12 14 16 18 20 i) 02 04 06 08 10 12 14 16 18 20 VcE-Collector to Emitter Voltage—V_ VCE-Collector to Emitter Voltage-V OC CURRENT vs. DC CURRENT GAIN vs. COLLECTOR CURRENT COLLECTOR CURRENT OOOO gee 10000 pp rere FE ae ESET. 7 cee vee~80v
5000 Pt =H HEHE Vce= 10 VE 5000 Se 2, 8 CH om
—— oat 45.0 v {Tih a Oe 000s ee | . Pn Cn 2A SVT FCP cot te 8 20001 74 1.0 VETTTTI 5S 2000 pte eel bd a --- ini NUT 6 ——o TINA THT a 0 Ce sc
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° eo 8 Oe it 2 cof TTT on #200} TI] ee A | eT s0 EEE 80 EE FH 10m 20m 50m 100m200m 500m 1 2 5 10 10m 20m 50m 100m200m 500m 1 2 5 10 I¢-Collector Current—A I¢-Collector Current—A Nene
e@ COLLECTOR CURRENT vs. COLLECT! BASE 10 EMITTER VOLTAGE VOLTAGE vs, COLLECTOR CURRENT === lO SSS SSS vce soy | = a ‘=== =———— Se oes sais esi fee tt es > Eee 2 rH eri 7 of TT i + iLL ye sok LIM OM LT 5 = SS SSS SS SS SSSsS= BS F=4 Vee (saty |C/18 ee iy © 500 mt A Se se 7 — j ie Say ae eee eee= $8 ES no 5 200 m nl A Ae £5 oz EN ae Som ArAeA tlt tt an Bele aml : Ee A SS 55 See Aes ae 9 50m SEAS 1 38 00s sot te 7 a A 8s AeA 20 m HS 2 ooo} eer CTT ETT SOOO) ze m1 35 =e Sa Vee Base to Emitter Voltage-V SS Fee e@ eo oooe- I TT oooL_L LHW TTI TTT 10m 20m 50m 100 m200m 500m 10 20 50 10 I¢—Collector Current—A GAIN BANDWIDTH PRODUCT vs. ‘000 EMITTER CURRENT “ SOLE OH t6 BASE VOLTAGE pp 1000 100 pq 2° SS voe=10 v | Od es aoe a so eee 5 a ee te 6 EE it. Mz — — t—t 8 4 500 ES ee | es eS Set a ERE EH 2 [| LeaTilt| ISN 8 st “CTC NTU rR = 100 fe HY 2 20 mis all Sp = aS ~ a 50 FE b = a a S 10 & (Le ro? 5. 0 2 50. 100 ee “osrcnacar 1 Sse vonee 10m -20m 50m -100m-200m -S00m -10 -20 $0 10 e@ Ig-Emtter Current-A REFERENCE Quality grade on NEC semiconductor devices. [_teriz09 | ‘Semiconductor device mounting technology manual. [teri207 | | semcondvtordeieepeclape mania eI [cuit asi asurce forsemicontutrdeies ez | [ sericonductorseectonguge, | #4444
aaa | NEC 2SD1950 poe No part-of this document may be copied or reproduced in any form or by any means without the prior written r ) consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual Property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, Copyrights or other intellectual property rights of NEC Corporation or others The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact r ) our sales people in advance. Application-examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc Ma 92.6 TT I ee