D18754EJ1V0DS00 NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR NP160N04TUG SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D18754EJ1V0DS00 (1st edition) Date Published May 2007 NS CP(K) Printed in Japan 2007

DESCRIPTION

The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

Pure Sn (Tin) Tape 800 p/reel TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode).

FEATURES

  • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
  • High Current Rating ID(DC) = ±160 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±160 A Drain Current (pulse) Note1 ID(pulse) ±640 A Total Power Dissipation (TC = 25°C) PT1 220 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Single Avalanche Energy Note2 EAS 372 mJ Repetitive Avalanche Current Note3 IAR A Repetitive Avalanche Energy Note3 EAR 372 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. RG = 25 Ω, Tch(peak) ≤ 150°C THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W (TO-263-7pin)

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V Forward Transfer Admittance Note | yfs | VDS = 5 V, ID = 40 A S Drain to Source On-state Resistance Note RDS(on) VGS = 10 V, ID = 80 A 1.6 2.0 mΩ Input Capacitance Ciss VDS = 25 V, 10500 15750 pF Output Capacitance Coss VGS = 0 V, 980 1470 pF Reverse Transfer Capacitance Crss f = 1 MHz 630 1140 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 80 A, 110 ns Rise Time tr VGS = 10 V, 170 ns Turn-off Delay Time td(off) RG = 0 Ω 190 ns Fall Time tf ns Total Gate Charge Note QG VDD = 32 V, 178 270 nC Gate to Source Charge QGS VGS = 10 V, nC Gate to Drain Charge QGD ID = 160 A nC Body Diode Forward Voltage Note VF(S-D) IF = 160 A, VGS = 0 V 0.92 1.5 V Reverse Recovery Time trr IF = 160 A, VGS = 0 V, ns Reverse Recovery Charge Qrr di/dt = 100 A/μs nC Note Pulsed test TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10% 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% μ

TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE dT - Percentage of Rated Power - % 100 120 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W 100 150 200 250 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.1 100 1000 10000 0.1 100 ID(DC) ID(pulse) Tc = 25°C Single Pulse DC PW = 1i00 μs 1i m is Secondary brakedown Limited RDS(on) Limited (VGS = 1i0 V) 1i0 m is Power Dissipation Limited VDS - Drain to Source Voltage – V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 Rth(ch-A) = 83.3°C/Wi Rth(ch-C) = 0.68°C/Wi Single Pulse PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 200 300 400 500 600 700 0.5 1.5 2.5 VGS = 10 V Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A 0.001 0.01 0.1 100 1000 VDS = 10 V Pulsed TA = −55°C 25°C 75°C 125°C 175°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(th) - Gate to Source Threshold Voltage - V 0.5 1.5 2.5 3.5 -75 -25 125 175 225 VDS = VGS ID = 250 μA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 100 1000 0.1 100 VDS = 5 V Pulsed Tch = −55°C 25°C 75°C 150°C 175°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 1000 VGS = 10 V Pulsed ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ ID = 80 A Pulsed VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -75 -25 125 175 225 VGS = 10 V ID = 80 A Pulsed Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 10000 100000 0.01 0.1 100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 100 1000 tr td(off) td(on) tf VDD = 20 V VGS = 10 V RG = 0 Ω ID - Drain Current - A VDS - Drain to Source Voltage - V 100 150 200 VDS ID = 160 A Pulsed VGS VDD = 32 V 15 V 8 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A 0.1 100 1000 0.5 1.5 VGS = 10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 1000 0.1 100 1000 di/dt = 100 A/μs VGS = 0 V IF - Diode Forward Current - A

PACKAGE DRAWING (Unit: mm) TO-263-7pin (MP-25ZT) EQUIVALENT CIRCUIT Source Body Diode Gate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side Draw-out side MARKING INFORMATION 160N04 Lot code NEC UG Pb-free plating marking Abbreviation of part number RECOMMENDED SOLDERING CONDITIONS The NP160N04TUG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Soldering Conditions Recommended Condition Symbol Infrared reflow Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less IR60-00-3 Partial heating Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating).

The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":