2SD1857_12 UTC | Alldatasheet
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UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2012 Unisonic Technologies Co., LTD QW-R201-057,F POWER TRANSISTOR FEATURES * High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) TO-92 TO-92NL TO-251 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2SD1857L-x-T92-B 2SD1857G-x-T92-B TO-92 E C B Tape Box 2SD1857L-x-T92-K 2SD1857G-x-T92-K TO-92 E C B Bulk 2SD1857L-x- T92-R 2SD1857G-x- T92-R TO-92 E C B Tape Reel 2SD1857L-x-T9N-B 2SD1857G-x-T9N-B TO-92NL E C B Tape Box 2SD1857L-x-T9N-K 2SD1857G-x-T9N-K TO-92NL E C B Bulk 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T TO-251 E C B Tube Note: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE
2SD1857 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 1 - 0 5 7 , F ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V CBO 120 V Collector-Emitter Voltage V CEO 120 V Emitter-Base Voltage V EBO 5 V Collector Power Dissipation TO-92NL PC 0.5 W TO-92 1 TO-251 2 Collector Current I C 2 A Collector Current I CP 3 A Junction Temperature T J +150 ℃ Storage Temperature T STG -40 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25℃) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BV CBO I C=50µA 120 V Collector-Emitter Breakdown Voltage BV CEO I C=1mA 120 V Emitter-Base Breakdown Voltage BV EBO I E=50µA 5 V Collector Cut-Off Current I CBO V CB=100V 1 µA Emitter Cut-Off Current I EBO V EB=4V 1 µA DC Current Transfer Ratio h FE V CE=5V, IC=0.1A 82 390 Collector-Emitter Saturation Voltage V CE(SAT) IC=/IB=1A/0.1A (Note) 0.4 V Transition Frequency f T V CE=5V, IE= -0.1A, f=30MHz. 80 MHz Output Capacitance C OB V CB=10V, IE=0A, f=1MHz (Note) 20 pF Note: Measured using pulse current. CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390
2SD1857 NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 1 - 0 5 7 , F TYPICAL CHARACTERISTICS Collector Current: IC(A) Collector to Emitter Voltage: VCE(V) 0.2 0.8 0.4 0.6 435 1.0 IB=0mA 10mA 20mA 30mA 40mA 50mA 60mA 70mA 80mA 90mA 100mA 0.010.02 0.05 2 1000 500 200 100 0.1 0.2 0.5 Collector Current,IC (A) TA=25°C 51 0 DC Current Fain: h FE VCE=10V 0.01 0.02 0.05 2 0.5 0.2 0.05 0.01 0.1 0.2 0.5 Collector Current,IC (A) 0.02 TA=25°C 0.1 51 0 Collector Saturation Voltage: V CE(SAT)(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.