STD17N05 STMICROELECTRONICS | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.06Ω n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100 oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION n THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) n SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM December 1996 TYPE V DSS R DS(on) ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD17N05 STD17N06 V DS Drain-source Voltage (VGS =0 ) 5 0 6 0 V V DG R Drain- gate Voltage (RGS =2 0k Ω )5 0 6 0 V V GS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc =2 5 oC1 7 A ID Drain Current (continuous) at Tc =1 0 0oC1 2 A IDM (•) Drain Current (pulsed) 68 A P tot Total Dissipation at Tc =2 5 oC5 5 W Derating Factor 0.37 W/ oC Tstg Storage Temperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC (•) Pulse width limited by safe operating area IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”)

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 2.73 100 1.5 275 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ <1 % ) 17 A E AS Single Pulse Avalanche Energy (starting Tj =2 5 oC, ID =I AR ,V DD =2 5V ) 60 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ <1 % ) 15 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ <1 % ) 12 A ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =2 5 0µAV GS =0 forSTD17N05 forSTD17N06 V V IDSS Zero Gate Voltage Drain Current (VGS =0 ) V DS =M a xR a t i n g V DS = Max Rating x 0.8 Tc =1 2 5oC µA µA IGSS Gate-body Leakage Current (VDS =0 ) V GS = ± 20 V ± 100 nA ON (∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS (th) Gate Threshold Voltage VDS =V GS ID =2 5 0µ A2 2 . 9 4 V R DS(on) Static Drain-source On Resistance V GS =1 0V I D = 8.5 A 0.06 0.085 Ω ID(on) On State Drain Current VDS >I D(on) xR DS(on)max V GS =1 0V 17 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (∗)F o r w a r d Transconductance V DS >I D(on) xR DS(on)max ID =8 . 5A 5 8 S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =2 5V f=1M H z V GS =0 6 0 0 250 800 350 120 pF pF pF STD17N05/STD17N06

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time V DD =3 0V I D =8 . 5A R G =5 0 Ω VGS =1 0V (see test circuit figure) 120 170 ns ns (di/dt)on Turn-on Current Slope V DD =4 0V I D =1 7A R G =5 0 Ω VGS =1 0V (see test circuit figure)

250 A/ µs

V DD =4 0V I D =1 7A V GS =1 0V 2 2 30 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time V DD =4 0V I D =1 7A R GS =5 0 Ω V GS =1 0V (see test circuit figure) 120 180 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) A A V SD (∗) Forward On Voltage I SD =1 7A V GS =0 1 . 5 V trr Q rr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 17 A di/dt = 100 A/µs V DD =3 0V T j=1 5 0oC 0.13 ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STD17N05/STD17N06

Static Drain-source On Resistance Output Characteristics Transconductance Gate Charge vs Gate-source Voltage STD17N05/STD17N06

Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Cross-over TimeTurn-off Drain-source Voltage Slope STD17N05/STD17N06

Fig. 1:Unclamped Inductive Load Test CircuitsFig. 2:Unclamped Inductive Waveforms Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics STD17N05/STD17N06

Fig. 4:Gate Charge Test Circuit Fig. 5:Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 3:Switching Times Test Circuits For Resistive Load STD17N05/STD17N06

DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039 D A C L H B E G TO-251 (IPAK) MECHANICAL DATA 0068771-E STD17N05/STD17N06

DIM. mm inch A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 B2 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L2 0.8 0.031 L4 0.6 1 0.023 0.039 A C H DL2 B E G DETAIL ”A” DETAIL ”A” TO-252 (DPAK) MECHANICAL DATA 0068772-B STD17N05/STD17N06

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