2SD1796 SANKEN | Alldatasheet
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IC –V CE Characteristics (Typical) h FE –IC Characteristics (Typical) h FE –IC Temperature Characteristics (Typical) θj-a–t Characteristics Pc –Ta Derating 213 4 Collector-Emitter Voltage V CE (V) Collector Current IC (A) IB=20mA 0.3mA 1.0mA 0.4mA 0.5mA 0.8mA 0.6mA Safe Operating Area (Single Pulse)fT –IE Characteristics (Typical) 410.1 0.50.05 500 100 1000 10000 20000 5000 Collector Current IC (A) DC Current åGain h FE (VCE =4V) –0.01 –0.1 –1 –4 120 100 Cut-off Frequency fT (MH Z ) (VCE =10V) Emitter Current IE (A) Typ 10 503 5 100 0.05 0.1 0.5 Collector-Emitter Voltage VCE (V) Collector Current IC (A) Without Heatsink Natural Cooling DC 100ms 10ms 1ms 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θj-a(˚C/W) Typ V CB =10V IE =–2V V CE (sat)–IB Characteristics (Typical) 0.2 0.5 5 101 100 50 Base Current IB (mA) Collector-Emitter Saturation Voltage VCE(sat) (V) IC =4A IC =3AIC =2A IC =1A IC –V BE Temperature Characteristics (Typical) 02 1 Base-Emittor Voltage V BE (V) Collector Current IC (A) (VCE =2V) 1 125˚C (Case Temp)25˚C (Case Temp) –30˚C (Case Temp) Collector Current IC (A) DC Current åGain h FE 0.05 0.5 1 40.1 100 500 1000 5000 10000 20000 (VCE =4V) 125˚C 25˚C –30˚C 00 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation P C (W) With Infinite heatsink Without Heatsink 150x150x2 50x50x2 100x 100x2 Natural Cooling Silicone Grease Heatsink: Aluminum in mm Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj T stg Ratings 60±10 60±10 0.5 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W n Absolute maximum ratings n Electrical Characteristics Ratings 10max 10max 60±10 2000min 1.5max 60typ 45 typ Unit mA mA V V MHz pF Conditions VCB=50V VEB=6V IC=10mA VCE=4V, IC=3A IC=3A, IB=10mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz (Ta=25°C) (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB External DimensionsFM20(TO220F) ø3.3±0.2 10.1±0.2 4.0±0.2 16.9±0.313.0min 8.4±0.2 0.8±0.2 3.9 ±0.2 2.542.54 1.35±0.15 0.85+0.2 -0.1 1.35±0.15 2.2±0.2 4.2±0.2 2.8 c0.5 2.4±0.20.45+0.2 -0.1 BE C a b n Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω ) IC (A) VBB2 (V) IB2 (mA) –10 ton (ms) 1.0typ tstg (ms) 4.0typ tf (ms) 1.5typ IB1 (mA) VBB1 (V) Weight : Approx 2.0g a. Part No. b. Lot No. Built-in Avalanche Diode for Surge Absorbing Darlington B C E(3kΩ )(150Ω ) Equivalent circuit