2SD1780 NEC | Alldatasheet
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NEC / NPN SILICON TRANSISTOR DESCRIPTION — The 2SD1780 is high hr¢ transistor, built-in a zener diode at B.C. PACKAGE DIMENSIONS It is suitable for use to operate from IC without predriver, in millimeters (inches) such as hammer or motor driver. 7.0 MAX. 12 FEATURES © Built in 60 V Zener Diode at B-C. [LT] & is © High DC Current Gain. —= ze al Bes hre = 800 to 3200 (@Vcg = 5.0 V, Ic = 1.0 A) 8:01 a Pe 8 33 © Wide “SOA”. (0.031) Erg SS Voceo = 60 + 10 V, Icioc) = 2.0A 0,640.1 | zz | © Low Collector Saturation Voltage. ee. | Seas 2. Veetar) = 0.20 TYP. (@lc = 1.0 A, Ip = 10mA) Tosso. |] 88) li (0.024) S ABSOLUTE MAXIMUM RATINGS aL 0550.1 Maximum Temperatures co.o6ny | | 0.067 vee (01022) Maximum Power Dissipation (Ta = 25 °C) 2 Collector Es 2 cx) Maximum Voltages and Currents (Ta = 25 °C) * PWs 10 ms, Duty Cycle s 50 % ELECTRICAL CHARACTERISTICS (Ta = 25 °C) Vcso Collector to Base Voltage 50 60 70 Vv Ic = 1.0 mA, le =0 VcEo Collector to Emitter Voltage 50 60 70 v I¢ = 10 mA, Reg = hee1 DC Current Gain 800 1500 3200 - Voce =5.0V, IC =1.0A hee2 DC Current Gain 500 - VcE=5.0V,I¢=2.0A IcBo Collector Cutoff Current 100 nA Veg =40V, Ie =0 leBo Base Cutoff Current 100 nA Vep=12V,Ic¢=0 VcE(sat)1** Collector Saturation Voltage 0.1 0.2 v I¢ = 0.5A, Ig =5.0mA ) Vee lsat)2"* Collector Saturation Voltage 0.2 03 v IC =1.0A, Ig =10maA VBE(sat)"* Base Saturation Voltage 08 12 v Ig =1.0A, Ig = 10 mA : ton Turn On Time 08 us Ic =1.0A | tstg Storage Time 2.0 us ( =—1g2=10mA tf Fall Time 1.2 us RL = 202, Voc = 20V ** PW $350 us, Duty Cycle $ 2% . Classification of heey | [monk [oom To. Tk | [_Range | 00 0 1600 | 12000 2400 | 2000 t0 3200 | Test Conditions: VcE = 5.0 V, Ic = 1.0A a 500
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