D16P1C

MPSA43C ETC | Alldatasheet

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Technical content

BIPOLAR TRANSISTOR CHIPS . NPN Transistors ‘MPS’ Device Types ELECTRICAL CHARACTERISTICS at T, = 25°C le Device | Max. Max. Gop} Mee Nee Glo G@Vo_|Max. G@lg | Min. Ge | Con! ape femal || agra) SA. a (v)_ (ed fy a | ay Proosss MPSA43C | 500] 200 | 200 | 6.0 | 100 160/40 — 30 10/0.5 20) 50 10 BLA MPSDOIC | 500) 200 | 200 | 4.0 | 100 80)25 — 10 10} — —j 40 10 BLA mpspozc | 600] 140 | 140 | 4.0 | 100 80) 25 — 10 10] — —| 40 10 VXA mesposc | 600] 100) 100 | 4.0 | 100 80|25 — 10 10) — —| 40 10 VXA MPSDO4C | 500} 253] — | 10 |1000 20) 2k — 100 5.0} 1.0 100/100 10 SQL MPSDO5C | 800 25 | 4.0 |1000 20}80 — 100 5.0] 0.5 100}100 50) — DAC MPSDO6C | 500 25 | 4.0 |1000 20/50 — 10 5.0] 0.3 50/100 10) — BBC MPSLO1C | 600 120 | 5.0 |1000 75] 50 300 10 5.0] 0.2 10} 60 10 | 8.0 VXA mpsu4sc_[1000 40 | 12 | 100 30 [25k 150k 200 5.0! 1:5 1000| 100 200 | 6.0 BNB NOTES: 3) Vigaycest/lcess 88 applicable, 4) Maximum at typical JEDEG conditions. 4) ia" 2) pA. 5) Visrycer at R=100. ‘D’ Device Types ELECTRICAL CHARACTERISTICS at T, = 25°C [ [women [im [| Device harycoalMerycolomyeoo| MAX. @Nca] bre tre Gly @Voe|Max. Gl [Min. Ge ty | Net ‘oe Wy v) ). (nA) (V) | Min, Max. (mA) (V) | (V) (mA) (MHz) (mA) (ns) | (4B) | Process DI6PiC 500) 18 12 12 }100 18] 6K — 100 5.0] 1.4 200} 60 2.0] 10 TPM D33D21C | 800} 35%] 25 | 5.0 |1003 25} 60 200 2.0 2.00.75 500] 100 50] 15 DAC D33D22C | 800] 353} 25 | 5.0 |1003 25 |150 500 2.0 2.00.75 500] 135 50] 15 DAC D33D24C | 800) 50°} 40 | 5.0 /1003 25 | 60 120 2.0 2.00.75 500} 80 50] 15 DAC D33D25C_| 800} 503 | 40 | 5.0 |1003 25 | 100 200 2.0 2.0 10.75 500|120 50 | 15 DAC D33D26C | 800) 503} 40 | 5.0 |1003 25 | 150 300 2.0 2.0 |0.75 500/135 50] 15 DAC D33D27C | 800) 50°} 40 | 5.0 |100% 25 | 250 500 2.0 2.0 0.75 500/150 50} 15 DAC D33D29C | 800) 703} 60 | 5.0 |1003 25 | 60 120 2.0 2.0 }0.75 500} 80 50} 15 DAC D33D30C | 800) 70°} 60 | 5.0 |1003 25 | 100 200 2.0 2.0|0.75 500}120 50] 15 DAC D40D4C_|1000} 603 | 45 | 5.0 |1003 60 | 50 150 100 2.0/0.5 500} — —|— DID D40D5C | 1000} 60° | 45 100? 60 | 120 360 100 2.0] 0.5 500 OID | D40D10C {1000} 903 | 75 100 90 | 50 150 100 2.0] 1.0 500 DID } D40D11C {1000} 903 | 75 1003 90 | 120 360 100 2.0| 1.0 500 DID i NOTES: 3) Vigayces/lces» a8 applicable. | 1) Maximum at typical JEDEC conditions. 4) nA 2) pA. 5) Vienjcen at R= 102, A : 312 i

SEMICONDUCTOR CHIP PACKAGING UNSCRIBED WAFER SAWN WAFER INDIVIDUAL COMPARTMENTS IN NATURAL POLYPROPYLENE TRAY ON STRETCHED MEMBRANE IN SEE-THROUGH PLASTIC BOX sot — oD = <P sadam —e OLD A AN C=) wo No.7 Dg Mo. A120 ag No.Aaie2t MAXIMUM ALLOWABLE POWER DISSIPATION AS A FUNCTION OF AMBIENT TEMPERATURE e 5.0 A g ALUMINA - 25.4 MM x 25.4 MM x0.25 MM 2 40 CHIP SIZE = 0.635 MM x 0.635 MM z = 0.025 IN. x 0.025 IN.

9 PN Tytmax) = 150°C/W

€ 30 _ 7 y SS a & 20 ISS W410 iw a” \\ < wa y3 oo < 25 50 78 100 125 150 AMBIENT TEMPERATURE IN °C Dg No.A.625,