UPD16805 NEC | Alldatasheet

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Technical content

µPD16805 MONOLITHIC H BRIDGE DRIVER CIRCUIT

DESCRIPTION

The µPD16805 is a monolithic H bridge driver IC which uses low-ON resistance power MOS FETs in its driver stage. This driver has a forward, reverse, and brake functions and is ideal for the driver circuit of motors for camera that advance or rewind the film, and for auto focusing or zooming. This IC supports a drive current of up to 1.0 A (DC). FEATURES PIN CONFIGURATION (Top View)

  • High drive current IDR = 4.2 A MAX. at PW ≤ 200 ms (single pulse) IDR = 1.0 A (DC)
  • Low-ON resistance (sum of ON resistances of top and bottom MOS FET) R ON = 0.4 Ω TYP. at IDR = 1.0 A
  • Standby function that turns OFF charge pump circuit
  • Compact surface mount package 16-pin plastic SOP (300 mil)

ORDERING INFORMATION

µPD16805GS 16-pin plastic SOP (300 mil) BLOCK DIAGRAM C 1 VDD VG VM OUT1 OUT2 PGNDDGND C 2 C 3 IN2 IN1 INC STBY Contorol circuit Contorol circuit Level shift circuit D MOS FET H bridge circuit Charge pump circuit 50 kΩ C 1 = C2 = C3: External capacitors (10 nF) Load motor Document No. G11032EJ3V0DS00 (3rd edition) Date Published July 1997 N Printed in Japan The information in this document is subject to change without notice. C 2L C 1H C 1L VM VDD IN1 IN2 INC C 2H VG STBY OUT2 PGND OUT1 VM DGND

µPD16805 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Rating Unit Supply voltage V DD –0.5 to +6.5/+8.0Note V VM –0.5 to +6.5/+8.0Note VG pin applied voltage V G 15 V Input voltage V IN –0.5 to VDD + 0.5 V H bridge drive current I DR1 DC 1.0 A IDR2 PW ≤ 200 ms (single pulse) 4.2 A Power consumption P T TA = 25 °C 1.0 W Operating temperature range T A –30 to +60 °C Operating junction temperature T J (MAX) 150 °C Storage temperature range T stg –55 to +150 °C Note VDD when the charge pump is used/VDD and VM when VG is supplied from an external source RECOMMENDED OPERATING CONDITIONS Parameter Symbol Conditions Ratings Unit MIN. TYP. MAX. Supply voltage V DD During normal operation 3.0 6.0/7.5Note 2 V All input pins are low 2.5 VM 0.5 7.5 V Charge pump capacitance C 1 to C3 10 nF VG pin applied voltage Note 1 VG 11 14 V Operating temperature T A Ambient temperature –30 60 °C Notes 1. When a voltage is applied from an external source to the VG pin 2. When the charge pump is used/when VG is supplied from an external source

µPD16805 ELECTRICAL SPECIFICATIONS (Unless otherwise specified, TA = 25 °C, VDD = recommended operating condition, VM = 0.5 to 7.5 V) Parameter Symbol Conditions Ratings Unit MIN. TYP. MAX. VDD pin current I DD1 VDD = 5 V, TA = recommended 0.6 2.0 mA conditions Control pins at high level IDD2 VDD = 5 V, TA = recommended 0.3 10 µA conditions Control pins at low level VM pin current I M1 Control pins at low level, 0.1 10 µA TA = recommended conditions IM2 Control pins at low level 1.0 µA H bridge ON resistanceNote R ON IDR = 1.0 A, VDD = VM = 5 V 0.4 0.6 Ω Control pin high-level input voltage V IH TA = recommended condition VDD × 0.6 V Control pin low-level input voltage V IL TA = recommended condition VDD × 0.2 V Charge pump circuit turn-ON time t ONG VDD = VM = 5 V, 0.5 1.0 ms H bridge output circuit turn-ON time tONH TA = recommended conditions 10 µs H bridge output circuit turn-OFF time tOFFH C 1 = C2 = C3 = 10 nF 5.0 µsIDR = 1.0 A Control pin input pull-down resistor R IND 35 50 65 k Ω TA = recommended condition 25 75 k Ω Note Sum of ON resistances of top and bottom MOS FETs

µPD16805 FUNCTION TABLE Input Signal Function IN1 IN2 INC STB H L H H Forward mode L H H H Reverse mode H H H H Brake mode L L H H Stop mode ×× L H Stop mode ××× L Standby mode VM ON OFF ONOFF OUT1 OUT2 VM ON OFF ONOFF OUT1 OUT2 VM ON OFF ON OFF OUT1 OUT2 VM OFFOFF OFF OFF OUT1 OUT2 Forward mode Reverse mode Brake mode Stop mode

µPD16805 APPLICATION CIRCUIT 1 Note It is recommended to connect a capacitor of 1 to 10µF between VM and GND to protect the gate of the DMOS FET from surge voltage. VM = 0.5 V to 7.5 V VDD = 3.0 V to 6.0 V C 1 = C2 = C3 = 10 = nF C 1 C 2 C 3 VDD VM OUT1 OUT2 PGND VM 102 3 16 1 15 DGND INC STBY 14 IN1 IN2 M OSC circuit Charge pump circuit Control circuit Level shift circuit D MOS FET H bridge circuit Battery CPU Pull-down resistor 50 kΩ TYP. Film take-up motor Forward mode Brake mode Reverse mode Stop mode DC-DC convertor C

4 Note

H H L L IN1 µ IN2

µPD16805 APPLICATION CIRCUIT 2 Note It is recommended to connect a capacitor of 1 to 10µF between VM and GND to protect the gate of the DMOS FET from surge voltage. VM = 0.5 V to 7.5 V VG = 11 V to 14 V VDD = 3.0 V to 7.5 V VDD VM OUT1 OUT2 PGND VM 102 3 16 1 15 DGND INC STBY 14 IN1 IN2 M OSC circuit Charge pump circuit Control circuit Level shift circuit D MOS FET H bridge circuit Battery CPU Pull-down resistor 50 kΩ TYP. Film take-up motor Forward mode Brake mode Reverse mode Stop mode DC-DC convertor C µ H H L LIN1 IN2

µPD16805 TYPICAL CHARACTERISTICS (T A = 25 °C) 10 20 30 40 50 60 70 800 0.2 0.4 0.6 0.8 1.0 1.2 1.4 P T vs. TA Characteristics Ambient temperature TA (˚C) Total power dissipation PT (W) 51 0 1 5 2 00 V G vs. IG Characteristics Gate applied voltage VG (V) Gate current IG ( A) – 25– 50 0 25 50 75 100 0.2 0.4 0.6 0.8 1.0 1.2 R ON vs. TA Characteristics Ambient temperature TA (˚C) H bridge ON resistance RON (Ω ) IDR = 1.0 A VDD = VM = 5 V µ VDD = 5 V 51 0 1 5 2 00 0.2 0.4 0.6 0.8 1.0 1.2 V G vs. RON Characteristics Gate applied voltage VG (V) H bridge ON resistance RON (Ω ) VDD = 5 V

µPD16805

16 PIN PLASTIC SOP (300 mil)

A B C E F G H I J 10.46 MAX. 1.27 (T.P.) 1.8 MAX. 1.55 7.7±0.3 0.78 MAX. 0.12 1.1 5.6 M 0.1±0.1 N 0.412 MAX. 0.031 MAX. 0.004±0.004 0.071 MAX. 0.061 0.303±0.012 0.220 0.043 0.005 0.050 (T.P.) P16GM-50-300B-4 P 3 ° +7° NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition. D 0.40 0.016 +0.10 –0.05 K 0.20 0.008 +0.10 –0.05 L 0.6±0.2 0.024 0.10 –3° +7° –3° 0.004 +0.008 –0.009 +0.004 –0.002 +0.004 –0.003 A C D G P detail of lead end F E B H I L K M M J N PACKAGE DIMENSION

µPD16805 RECOMMENDED SOLDERING CONDITIONS It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E). µPD16805GS Symbol of Soldering Method Soldering Conditions Recommended Soldering Infrared reflow Peak package temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.), IR35-00-2 Number of times: 2 MAX. VPS Peak package temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.), VP15-00-2 Number of times: 2 MAX. Note The number of storage days at 25 °C, 65% RH after the dry pack has been opened

µPD16805 [MEMO]

µPD16805 [MEMO]

µPD16805 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5